The Challenges For Electromagnetic Diagnosis And Control of Power Devices using Wide-Band Gap Semi-conductors

2020 ◽  
Author(s):  
J.M. Larbaig ◽  
J.M. Dienot ◽  
R. Ruscassie ◽  
I. Ramos
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap ◽  
And Control

Challenges for energy efficient wide band gap semiconductor power devices

2014 ◽  
Vol 211 (9) ◽  
pp. 2063-2071 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Band Gap ◽  
Energy Efficient ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap

Challenges and State-of-the-Art of Oxides on SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
High Voltage ◽  
State Of The Art ◽  
Wide Band ◽  
High Current ◽  
Power Devices ◽  
Wide Band Gap ◽  
Single Crystal Sic ◽  
Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

(Invited) Passive Component Technologies for Advanced Power Conversion Enabled by Wide-Band-Gap Power Devices

2019 ◽  
Vol 41 (8) ◽  
pp. 315-330 ◽  
Author(s):  
Charles R. Sullivan ◽  
Di Yao ◽  
Garet Gamache ◽  
Alexander Latham ◽  
Jizheng Qiu
Keyword(s):  
Band Gap ◽  
Power Conversion ◽  
Wide Band ◽  
Passive Component ◽  
Power Devices ◽  
Wide Band Gap

Digital Control of DC-DC Converters Employing Wide Band Gap (WBG) Power Devices

2014 ◽  
Vol 64 (7) ◽  
pp. 155-161
Author(s):  
L. Guo ◽  
A. Pozo Arribas ◽  
M. Krishnamurthy ◽  
K. Shenai ◽  
J. Wang
Keyword(s):  
Band Gap ◽  
Digital Control ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap

scholarly journals 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

2018 ◽  
Vol 924 ◽  
pp. 913-918 ◽  
Author(s):  
Francesco La Via ◽  
Fabrizio Roccaforte ◽  
Antonino La Magna ◽  
Roberta Nipoti ◽  
Fulvio Mancarella ◽  
...  
Keyword(s):  
Band Gap ◽  
Defect Density ◽  
Narrow Band ◽  
Wide Band ◽  
Growth Conditions ◽  
Power Devices ◽  
Wide Band Gap ◽  
New Material ◽  
Numerical Tools

The cubic polytype of SiC (3C-SiC) is the only one that can be grown on silicon substrate with the thickness required for targeted applications. Possibility to grow such layers has remained for a long period a real advantage in terms of scalability. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. However, the crystalline quality of 3C-SiC on silicon has to be improved in order to benefit from the intrinsic 3C-SiC properties. In this project new approaches for the reduction of defects will be used and new compliance substrates that can help to reduce the stress and the defect density at the same time will be explored. Numerical simulations will be applied to optimize growth conditions and reduce stress in the material. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized within the project.

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