scholarly journals Passive Component Technologies for Advanced Power Conversion Enabled by Wide-Band-Gap Power Devices

2019 ◽  
Vol 41 (8) ◽  
pp. 315-330 ◽  
Author(s):  
Charles R. Sullivan ◽  
Di Yao ◽  
Garet Gamache ◽  
Alexander Latham ◽  
Jizheng Qiu

2016 ◽  
Vol 7 (25) ◽  
pp. 4160-4175 ◽  
Author(s):  
F. Caffy ◽  
N. Delbosc ◽  
P. Chávez ◽  
P. Lévêque ◽  
J. Faure-Vincent ◽  
...  

Dibenzosilole and quinoxaline based copolymers were synthesized and tested in bulk-heterojunction solar cells showing power conversion efficiencies up to 5.14%.


2014 ◽  
Vol 211 (9) ◽  
pp. 2063-2071 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.


2018 ◽  
Vol 2018 (1) ◽  
pp. 000069-000074
Author(s):  
C Mark Johnson ◽  
Jordi Espina ◽  
Behzad Ahmadi ◽  
Jingru Dai ◽  
Bassem Mouawad ◽  
...  

Abstract Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in many converter applications. However, efficient operation at higher switching frequencies requires increased voltage and current transition rates. With conventional packaging and circuit construction, parasitic inductance and capacitance can deteriorate converter performance, reducing efficiency and adding to the electromagnetic interference (EMI) emitted from the system. Outside the commutation cell, fast voltage transitions may lead to unacceptably high levels of conducted and radiated EMI, so approaches involving the local filtering of converter outputs are attractive. To mitigate these effects in conventional modules, switching speeds are often deliberately limited and the potential benefits of using WBG technologies cannot be fully realized. Here we examine the design and realization of Converter-in-Package (CiP) modular blocks for system power levels from 100s W to 100s kW, incorporating individual commutation cells with close-coupled gate drives, input/output filtering and reduced EMI. The concept is illustrated through the realization of a modular, segmented power converter for an integrated drive.


2014 ◽  
Vol 64 (7) ◽  
pp. 155-161
Author(s):  
L. Guo ◽  
A. Pozo Arribas ◽  
M. Krishnamurthy ◽  
K. Shenai ◽  
J. Wang

2018 ◽  
Vol 924 ◽  
pp. 913-918 ◽  
Author(s):  
Francesco La Via ◽  
Fabrizio Roccaforte ◽  
Antonino La Magna ◽  
Roberta Nipoti ◽  
Fulvio Mancarella ◽  
...  

The cubic polytype of SiC (3C-SiC) is the only one that can be grown on silicon substrate with the thickness required for targeted applications. Possibility to grow such layers has remained for a long period a real advantage in terms of scalability. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. However, the crystalline quality of 3C-SiC on silicon has to be improved in order to benefit from the intrinsic 3C-SiC properties. In this project new approaches for the reduction of defects will be used and new compliance substrates that can help to reduce the stress and the defect density at the same time will be explored. Numerical simulations will be applied to optimize growth conditions and reduce stress in the material. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized within the project.


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