Development of high speed measurement system for cell-scaffold interaction

Author(s):  
Yu Hirano ◽  
Masaru Kojima ◽  
Mitsuhiro Horade ◽  
Kazuto Kamiyama ◽  
Yasushi Mae ◽  
...  
1994 ◽  
Vol 05 (03) ◽  
pp. 253-274 ◽  
Author(s):  
MASAO OBARA ◽  
JUNKO AKAGI

AlGaAs/GaAs heterojunction bipolar transistor (HBT) high speed ICs have been paving the way for the most sophisticated fiber-optic communication systems since the late 1980s. Recently 20 Gbps HBT ICs have been developed to accommodate the emergence of optical fiber amplifiers. HBT technology is now proceeding towards the development of 40 Gbps systems where the lack of high speed measurement system remains an issue.


2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Constantinos C. Kontogiannis ◽  
Athanasios N. Safacas

The principal objective of this paper is to demonstrate the capability of high speed measurement and acquisition equipment design and build in the laboratory at a very low cost. The presented architecture employees highly integrated market components eliminating thus the complexity of the hardware and software stack. The key element of the proposed system is a Hi-Speed USB to Serial/FIFO development module that is provided with full software and driver support for most popular operating systems. This module takes over every single task needed to get the data from the A/D to the user software gluelessly and transparently, solving this way the most difficult problem in data acquisition systems which is the fast and reliable communication with a host computer. Other ideas tested and included in this document offer Hall Effect measuring solutions using some excellent features and very low cost ICs widely available on the market today.


2021 ◽  
Vol 92 (5) ◽  
pp. 054701
Author(s):  
T. Hennen ◽  
E. Wichmann ◽  
A. Elias ◽  
J. Lille ◽  
O. Mosendz ◽  
...  

Author(s):  
T. Fernandez ◽  
Y. Newport ◽  
J.M. Zamanillo ◽  
A. Mediavilla ◽  
A. Tazon

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.


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