Electromagnetic pulse scattering by dielectric layer

2008 ◽  
Author(s):  
A. Rykshin ◽  
P. Zatsepin ◽  
S. Komarov
Keyword(s):  
Dielectric Layer ◽  
Electromagnetic Pulse

scholarly journals Electromagnetic Pulse Generated by a Horizontal Electric Dipole over a Perfect Conductor Covered with a Dielectric Layer

2018 ◽  
Vol 17 ◽  
pp. 01010
Author(s):  
Juan Zheng ◽  
Tong He ◽  
Ping Cao ◽  
Zhuhong Lin ◽  
Kai Li
Keyword(s):  
Dielectric Layer ◽  
Electromagnetic Pulse ◽  
Approximate Expression ◽  
Delta Function ◽  
Perfect Conductor ◽  
Transient Field ◽  
Planar Surface ◽  
Horizontal Electric Dipole ◽  
Trapped Surface ◽  
Microstrip Circuit

In this paper, the electromagnetic pulse due to a delta-function current excitation has been derived on the planar surface of a perfect conductor coated by a dielectric layer. The approximate expression of wave component is obtained when both the transmitting source and the receiving antennas are located on the surface of the dielectric. When the thickness of the intermediate layer is subjected to the condition of k1l<<0.6, this physical model is applied to the microstrip circuit. Analysis and computations of the wave components are carried out on the microstrip circuit, including the surface trapped wave vector which had been ignored in former studies. It is shown that the trapped-surface-wave terms should have been taken into consideration as the main contribution in total transient field in the far-field radiations.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

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