OMVPE Growth of AIGaIn/Ga/sub x/ln/sub 1-x/P Strained Quantum Well Structures and their Applications to Visible Laser Diodes

2005 ◽  
Author(s):  
T. Katsuyama ◽  
I. Yoshida ◽  
J. Hashimoto ◽  
Y. Taniguchi ◽  
H. Hayashi
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Structures ◽  
Visible Laser ◽  
Strained Quantum Well

OMVPE growth of AlGaInP/GaxIn1−xP strained quantum well structures and their applications to visible laser diodes

1992 ◽  
Vol 124 (1-4) ◽  
pp. 697-702 ◽  
Author(s):  
T. Katsuyama ◽  
I. Yoshida ◽  
J. Hashimoto ◽  
Y. Taniguchi ◽  
H. Hayashi
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Structures ◽  
Visible Laser ◽  
Strained Quantum Well

Strained quantum well AlGaInP visible laser diodes

2002 ◽  
Author(s):  
S. Honda ◽  
M. Shono ◽  
K. Yodoshi ◽  
T. Yamaguchi ◽  
T. Niina
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Visible Laser ◽  
Strained Quantum Well

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Mode Switching ◽  
Quantum Well Laser ◽  
Highly Efficient ◽  
Tm Mode ◽  
Strained Quantum Well

Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)nsuperlattice quantum well

1986 ◽  
Vol 49 (11) ◽  
pp. 636-638 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
K. Takahashi ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Visible Laser ◽  
Current Threshold

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

1.3 μm luminescence in (InAs) n /(GaAs) n strained quantum-well structures grown on GaAs

2020 ◽  
pp. 577-630
Author(s):  
E. J. Roan ◽  
K. Y. Cheng ◽  
P. J. Pearah ◽  
X. Liu ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well

scholarly journals Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission

2003 ◽  
Vol 103 (6) ◽  
pp. 689-694 ◽  
Author(s):  
M. Godlewski ◽  
V.Yu. Ivanov ◽  
E.M. Goldys ◽  
M. Phillips ◽  
T. Böttcher ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emission ◽  
Laser Diodes ◽  
Quantum Well Structures
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