The reverse bias requirement for pin diodes in high power switches and phase shifters

Author(s):  
G. Hiller ◽  
R.H. Caverly
1978 ◽  
Vol 9 (31) ◽  
Author(s):  
A. ROSEN ◽  
G. A. SWARTZ ◽  
F. C. DUIGON ◽  
A. M. GOMBAR
Keyword(s):  

2018 ◽  
Vol 7 (4) ◽  
pp. 2672
Author(s):  
Shamsher Ansari ◽  
Aseem Chandel ◽  
SMIEEE . ◽  
Zulfiqar Ali Sheikh

Recently the tremendous advancement has been seen in the field of matrix converter topology. For high power drive applications, industries often need high power AC-AC converters like three level matrix converter because it is having the ability to generate a set of balanced sine waves for inputs as well as outputs. The three level matrix converters possess better output performance with reduced harmonic contents compared to all two-stage indirect matrix converters. In this matrix converter topology, the idea of neutral-point clamped-VSI is employed to the inversion step of the matrix converter circuitry. To control the power switches the gate signals are produced using NTVV based space vector modulation. To justify the theoretical study a complete model of a three-level twin-step matrix converter has been designed in Matlab/Simulink and its performances are analysed.  


2006 ◽  
Vol 50 (7-8) ◽  
pp. 1368-1370 ◽  
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
Mrinal K. Das ◽  
Brett A. Hull

Author(s):  
J. F. White ◽  
C. Genzabella ◽  
D. Fryklund ◽  
R. Ziller

Author(s):  
MRINAL K. DAS ◽  
JOSEPH J. SUMAKERIS ◽  
BRETT A. HULL ◽  
JIM RICHMOND ◽  
SUMI KRISHNASWAMI ◽  
...  
Keyword(s):  

2018 ◽  
Vol 924 ◽  
pp. 573-576 ◽  
Author(s):  
Reza Ghandi ◽  
Peter Losee ◽  
Alexander Bolotnikov ◽  
David Lilienfeld

In this work, >2kV PiN diodes with >10um deep implant of B+ and 6um deep implant of Al+ have been fabricated to evaluate the quality of resulting pn junction after high-energy implantation. Acceptable low leakage currents at reverse bias and stable avalanche breakdown were observed for high energy implanted diodes (HEI-diodes) when compared to No-HEI-diodes that suggests minimal defect sites present after activation anneal.


Author(s):  
V. M. Krekhtunov ◽  
M. E. Golubtsov ◽  
V. S. Ovechkin ◽  
E. V. Komissarova

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