A high power 270 GHz frequency tripler featuring a Schottky diode parallel pair

2002 ◽  
Author(s):  
J. Thornton ◽  
C.M. Mann ◽  
P. de Maagt
Keyword(s):  
Schottky Diode ◽  
High Power ◽  
Parallel Pair

Product Development of High Power Electronics for High Reliability Applications

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000213-000217
Author(s):  
Tiago M. L. Teixeira ◽  
Juan Bevan
Keyword(s):  
Schottky Diode ◽  
High Power ◽  
High Reliability ◽  
Electronic Devices ◽  
Strong Relationship ◽  
Electrical Performance ◽  
Power Electronic ◽  
Die Attach ◽  
Bridge Rectifier ◽  
Positive Results

Abstract: The goal of this study was to achieve an improvement on power conversion based on SiC High Power Electronic devices at high temperature (+220°C). Two different devices (a SiC Schottky Diode & a Schottky Diode Bridge Rectifier) were studied using different substrates, die attach materials and die. Positive results were achieved; it was found a strong relationship between wire bond strength and die attach material; it was evident the two different die chosen for the study resulted in different electrical performance on the devices; and that, from the arrays of tests, there was no evident data to prefer one of the two substrates chosen for the study.

High power 110 GHz balanced Schottky diode frequency doubler

2019 ◽  
Vol 48 (9) ◽  
pp. 919002
Author(s):  
田遥岭 Tian Yaoling ◽  
何 月 He Yue ◽  
黄 昆 Huang Kun ◽  
蒋 均 Jiang Jun ◽  
缪 丽 Miao Li
Keyword(s):  
Schottky Diode ◽  
High Power ◽  
Frequency Doubler

Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current

2015 ◽  
Vol 821-823 ◽  
pp. 571-574
Author(s):  
Gerard Colston ◽  
Maksym Myronov ◽  
Stephen Rhead ◽  
Vishal A. Shah ◽  
Yogesh Sharma ◽  
...  
Keyword(s):  
Power Electronics ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
High Power ◽  
Reverse Bias ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Crystalline Quality ◽  
The Impact

Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCxbased Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCxlayers. While crystalline Si1-xCxis not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the behavior of rectifiers.

scholarly journals Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density Over 1000 W m −2

2019 ◽  
Vol 6 (24) ◽  
pp. 1901925 ◽  
Author(s):  
Shisheng Lin ◽  
Runjiang Shen ◽  
Tianyi Yao ◽  
Yanghua Lu ◽  
Sirui Feng ◽  
...  
Keyword(s):  
Power Density ◽  
Schottky Diode ◽  
High Power ◽  
Surface States ◽  
High Power Density

Modelling and characterization of the reverse recovery of a high-power GaAs Schottky diode

1996 ◽  
Vol 43 (5) ◽  
pp. 685-690 ◽  
Author(s):  
S.P. Pendharkar ◽  
C.R. Winterhalter ◽  
K. Shenai
Keyword(s):  
Schottky Diode ◽  
High Power
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