Product Development of High Power Electronics for High Reliability Applications
2017 ◽
Vol 2017
(HiTEN)
◽
pp. 000213-000217
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Abstract: The goal of this study was to achieve an improvement on power conversion based on SiC High Power Electronic devices at high temperature (+220°C). Two different devices (a SiC Schottky Diode & a Schottky Diode Bridge Rectifier) were studied using different substrates, die attach materials and die. Positive results were achieved; it was found a strong relationship between wire bond strength and die attach material; it was evident the two different die chosen for the study resulted in different electrical performance on the devices; and that, from the arrays of tests, there was no evident data to prefer one of the two substrates chosen for the study.
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2019 ◽
Vol 8
(10)
◽
pp. 3130-3132
◽
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2009 ◽
Vol 30
(12)
◽
pp. 918-930
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