Aim::
Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates.
Objective::
Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated
and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and
corresponding up and down-capacitances are obtained.
Methods::
The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both
actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a
prime candidate for phase shifter application. This is presented in this manuscript with a keen focus
on improvement capability by changing transmission line width, and also of overlap area; where
dielectric constant of the substrate also plays a vital role.
Results::
The present work exhibits very low down-capacitance over the spectrum whereas considerable
amount of up-capacitance. Also when overall performance in terms of all loss parameters are
considered, switch provides very low insertion loss, good return loss under actuated state and standard
isolation loss.
Conclusion::
Reduction of transmission line width of about 33% improved the performance of the switch by
increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave
spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as
compared with other published literature. Moreover, a better combination of both return loss, isolation
loss and insertion loss are reported in this present work compared with all other published data so far.
High-performance inline RF MEMS switch for application in 5G mobile networks