scholarly journals High-performance inline RF MEMS switch for application in 5G mobile networks

2021 ◽  
Vol 2086 (1) ◽  
pp. 012068
Author(s):  
A V Tkachenko ◽  
I E Lysenko ◽  
A V Kovalev ◽  
D V Vertyanov
Keyword(s):  
Mobile Networks ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Coplanar Waveguide ◽  
Satellite Communications ◽  
Elastic Suspension ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
5G Mobile Networks

Abstract This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

scholarly journals Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications

2019 ◽  
Vol 15 (2) ◽  
pp. 971
Author(s):  
Maham Kamil Naji ◽  
Alaa Desher Farhood ◽  
Adnan Hussein Ali
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Return Loss ◽  
Rf Mems ◽  
Dielectric Material ◽  
Satellite Communications ◽  
Superior Performance ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( &lt;-10 dB)  and insertion loss ( &gt; -0.5 dB) in UP state, whereas return loss ( &gt; -0.5 dB) and isolation (&lt;-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

The low-complexity RF MEMS switch at EADS: an overview

2011 ◽  
Vol 3 (5) ◽  
pp. 499-508 ◽  
Author(s):  
Bernhard Schoenlinner ◽  
Armin Stehle ◽  
Christian Siegel ◽  
William Gautier ◽  
Benedikt Schulte ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Rf Mems ◽  
Low Cost ◽  
Low Complexity ◽  
Phase Shifters ◽  
Experimental Investigations ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.

Sign in / Sign up

Export Citation Format

Share Document