At the IC design phase it is required to consider all possible factors to ensure the produced device’s compliance with specified requirements. For instance, it is necessary to select an optimum package and to lower its impact on IC’s final characteristics. Electromagnetic simula-tion is widely used to calculate electrical parameters of the electric motors, printed circuit boards, and microcircuits. In this work, full-wave three-dimensional finite element method simulation in frequency domain was used to characterize LGA package. S-parameters matrix obtained by modeling was converted to an equivalent RLGC transmission line model to determine the electrical parameters of the package – self-capacitance and inductance of the leads, mutual capa-citance of the adjacent leads, – on which the package bandwidth and crosstalk depend. Correct-ness of the obtained results was confirmed by comparison with the measurements results. It has been found that discrepancy between the results of modeled and measured capacitance was less than 5 %. The inductance modeling results turned out to be less accurate, which, however, is not significant for low and medium frequency applications.
Full-wave modeling of THz RTD-gated GaN HEMTs