Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding

Three-dimensional integration technology provides a promising total solution that can be used to achieve system-level integration with high function density and low cost. In this study, a wafer-level 3D integration technology using PDAP as an intermediate bonding polymer was applied effectively for integration with an SOI wafer and dummy a CMOS wafer. The influences of the procedure parameters on the adhesive bonding effects were determined by Si–Glass adhesive bonding tests. It was found that the bonding pressure, pre-curing conditions, spin coating conditions, and cleanliness have a significant influence on the bonding results. The optimal procedure parameters for PDAP adhesive bonding were obtained through analysis and comparison. The 3D integration tests were conducted according to these optimal parameters. In the tests, process optimization was focused on Si handle-layer etching, PDAP layer etching, and Au pillar electroplating. After that, the optimal process conditions for the 3D integration process were achieved. The 3D integration applications of the micro-bolometer array and the micro-bridge resistor array were presented. It was confirmed that 3D integration based on PDAP adhesive bonding is suitable for the fabrication of system-on-chip when using MEMS and IC integration and that it is especially useful for the fabrication of low-cost suspended-microstructure on-CMOS-chip systems.

Morphometry and displacement analysis of the upper lips following maxillary full-arch implant-supported fixed prostheses: a 3D morphometric study

Background With the emergence of three-dimensional (3D) integration technology, analysis of soft tissue displacement and morphological changes after maxillary full-arch implant-supported fixed prostheses can be performed. The aim of this study was to verify the feasibility of the 3D integration method for constructing the relative position of the prostheses and facial soft tissue, evaluate the displacement and morphological variation of the upper lips after maxillary full-arch implant-supported fixed prostheses. Methods Twenty-five maxillary edentulous patients were recruited in this study. At the time of final prosthesis delivery, the 3D prostheses data and three 3D facial profiles were integrated. After method validation, the 3D position changes of seven soft tissue landmarks were used to reflect the 25 upper lips. The variation of four morphological distances were analyzed to reflect the morphological alteration of the upper lips. Two pairs of dentofacial landmarks were used to analyze the sagittal relative position of the prostheses and soft tissue. The included patients were also grouped to determine the impact of sex, upper lip thickness, and length on lip support changes. Results The average distance of the two matched relative reliable forehead regions was only 0.32 mm. The sagittal shifts of labrale superius (LS), stomion (STO), crista philtri left (CPHL) and crista philtri right (CPHR) were 3.44 ± 1.39 mm, 2.52 ± 1.38 mm, 3.04 ± 1.18 mm, and 3.12 ± 1.21 mm, respectively. With the exception of the decrease in the length of subnasale (SN)-LS, the length of cheilion right (CHR)-cheilion left (CHL), CPHR-CPHL, and LS-STO significantly increased. The two pairs of dentofacial landmarks had strong positive movement correlations along the sagittal direction. Patients with thinner and longer lips showed more lip support than those with thicker and shorter lips by a clinically insignificant amount. Conclusions The integration method of 3D facial and dental data showed high repeatability in constructing the dentofacial relative position. The linear equations reflecting dentofacial relative position could aid clinicians in evaluating the restoration effect and estimate the upper lip variation.

3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator

One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon QL = 2.14 × 104 with Qi ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.