Germanium Telluride (GeTe) phase change resistors for reconfigurable circuit applications

2015 ◽  
Author(s):  
James M. Sattler ◽  
Ronald A. Coutu
Keyword(s):  
Phase Change ◽  
Germanium Telluride ◽  
Reconfigurable Circuit

One-Dimensional Phase-Change Nanostructure:  Germanium Telluride Nanowire

2007 ◽  
Vol 111 (6) ◽  
pp. 2421-2425 ◽  
Author(s):  
Xuhui Sun ◽  
Bin Yu ◽  
Garrick Ng ◽  
M. Meyyappan
Keyword(s):  
Phase Change ◽  
One Dimensional ◽  
Germanium Telluride

scholarly journals Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3029
Author(s):  
Xudong Wang ◽  
Xueyang Shen ◽  
Suyang Sun ◽  
Wei Zhang
Keyword(s):  
Thermal Stability ◽  
Optical Properties ◽  
Phase Change ◽  
Phase Change Materials ◽  
Random Access ◽  
Global Memory ◽  
Great Promise ◽  
Germanium Telluride ◽  
Structural Details ◽  
Tie Line

Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.

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