A Novel PbS/n-IGZO Thin-Film Nano-Photodetector with High Responsivity and High Photo-to-Dark Current Ratio

2018 ◽  
Author(s):  
Ying Meng ◽  
Jiawei Wang ◽  
Anjie Ming ◽  
Yinghui Wang ◽  
Xuewen Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Dark Current ◽  
Current Ratio ◽  
High Responsivity

scholarly journals Flexible Solar-Blind Ga2O3 Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio

2019 ◽  
Vol 11 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Zhe Li ◽  
Yue Hao ◽  
Chunfu Zhang ◽  
Yu Xu ◽  
Jiaqi Zhang ◽  
...  
Keyword(s):  
Dark Current ◽  
Current Ratio ◽  
High Responsivity ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

scholarly journals Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga2O3

2021 ◽  
Vol 2112 (1) ◽  
pp. 012006
Author(s):  
Yuhua Hao ◽  
Xia Wang
Keyword(s):  
Thin Film ◽  
Plasma Etching ◽  
Dark Current ◽  
Response Speed ◽  
Current Ratio ◽  
Photoelectrochemical Etching ◽  
Nano Structures ◽  
Before And After ◽  
Deep Ultraviolet ◽  
Wet Chemical

Abstract Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching were analyzed and discussed.

Highly sensitive thin film phototransistors based on a copolymer of benzodithiophene and diketopyrrolopyrrole

2015 ◽  
Vol 3 (9) ◽  
pp. 1942-1948 ◽  
Author(s):  
Lanchao Ma ◽  
Zhengran Yi ◽  
Shuai Wang ◽  
Yunqi Liu ◽  
Xiaowei Zhan
Keyword(s):  
Thin Film ◽  
Light Intensity ◽  
White Light ◽  
Dark Current ◽  
Light Irradiation ◽  
Low Light ◽  
Current Ratio ◽  
Low Light Intensity ◽  
Highly Sensitive

Thin film phototransistors based on a D–A copolymer of P(DPP4T-co-BDT) exhibited a photoresponsivity of up to 4.0 × 103 A W−1 and a photocurrent/dark-current ratio of 6.8 × 105 under white light irradiation with a low light intensity (9.7 μW cm−2).

High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film

2012 ◽  
Vol 33 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
Qinghong Zheng ◽  
Feng Huang ◽  
Jin Huang ◽  
Qichan Hu ◽  
Dagui Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
High Responsivity ◽  
Solar Blind

Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

2021 ◽  
pp. 1-1
Author(s):  
Cenk Ibrahim Ozdemir ◽  
Yannick De Koninck ◽  
Didit Yudistira ◽  
Nadezda Kuznetsova ◽  
Marina Baryshnikova ◽  
...  
Keyword(s):  
Dark Current ◽  
Ridge Waveguide ◽  
High Responsivity ◽  
Monolithically Integrated ◽  
Si Wafer

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

Sign in / Sign up

Export Citation Format

Share Document