Improved long-term stability of thin-film glassy carbon electrodes through the use of silicon carbide and amorphous carbon

Author(s):  
Maria Vomero ◽  
Elisa Castagnola ◽  
Juan S. Ordonez ◽  
Stefano Carli ◽  
Elena Zucchini ◽  
...  
2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.


RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.


2015 ◽  
Vol 26 ◽  
pp. 340-344 ◽  
Author(s):  
Ute Zschieschang ◽  
Konstantin Amsharov ◽  
Martin Jansen ◽  
Klaus Kern ◽  
Hagen Klauk ◽  
...  

2021 ◽  
Vol 4 (9) ◽  
pp. 9046-9056
Author(s):  
Buse Bilbey ◽  
Meltem Sezen ◽  
Cleva W. Ow-Yang ◽  
Busra Tugba Camic ◽  
Aligul Buyukaksoy

2020 ◽  
Vol 8 (34) ◽  
pp. 17420-17428 ◽  
Author(s):  
Yong Zhang ◽  
Nam-Gyu Park

Achieving 18% efficiency based on a stamped 171 nm-thick EAPbI3 film along with long-term stability.


1998 ◽  
Vol 507 ◽  
Author(s):  
I. Popov ◽  
G. Van Doorselaer ◽  
A. Van Calster ◽  
H. De Smet ◽  
E. Boesman ◽  
...  

ABSTRACTThe possibility of creating an 2D X-ray sensor array on the base of a-SiN:H thin films without switching elements and an X-ray conversion layer is presented in this report. The behavior of a-SiN:H Thin-Film Diode under X-ray irradiation, its limitations, and ways of increasing long-term stability and sensitivity of the sensor are discussed.


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