Etch rate monitoring with optical emission spectra in dry etching process

Author(s):  
S. W. Park ◽  
G. J. Seong ◽  
K. H. Baek ◽  
Y. J. Kim ◽  
K. S. Shin ◽  
...  
Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1535
Author(s):  
Shih-Nan Hsiao ◽  
Thi-Thuy-Nga Nguyen ◽  
Takayoshi Tsutsumi ◽  
Kenji Ishikawa ◽  
Makoto Sekine ◽  
...  

With the increasing interest in dry etching of silicon nitride, utilization of hydrogen-contained fluorocarbon plasma has become one of the most important processes in manufacturing advanced semiconductor devices. The correlation between hydrogen-contained molecules from the plasmas and hydrogen atoms inside the SiN plays a crucial role in etching behavior. In this work, the influences of plasmas (CF4/D2 and CF4/H2) and substrate temperature (Ts, from −20 to 50 °C) on etch rates (ERs) of the PECVD SiN films were investigated. The etch rate performed by CF4/D2 plasma was higher than one obtained by CF4/H2 plasma at substrate temperature of 20 °C and higher. The optical emission spectra showed that the intensities of the fluorocarbon (FC), F, and Balmer emissions were stronger in the CF4/D2 plasma in comparison with CF4/H2. From X-ray photoelectron spectra, a thinner FC layer with a lower F/C ratio was found in the surface of the sample etched by the CF4/H2 plasma. The plasma density, gas phase concentration and FC thickness were not responsible for the higher etch rate in the CF4/D2 plasma. The abstraction of H inside the SiN films by deuterium and, in turn, hydrogen dissociation from Si or N molecules, supported by the results of in situ monitoring of surface structure using attenuated total reflectance-Fourier transform infrared spectroscopy, resulted in the enhanced ER in the CF4/D2 plasma case. The findings imply that the hydrogen dissociation plays an important role in the etching of PECVD-prepared SiN films when the hydrogen concentration of SiN is higher. For the films etched with the CF4/H2 at −20 °C, the increase in ER was attributed to a thinner FC layer and surface reactions. On the contrary, in the CF4/D2 case the dependence of ER on substrate temperature was the consequence of the factors which include the FC layer thickness (diffusion length) and the atomic mobility of the etchants (thermal activation reaction).


2009 ◽  
Vol 18 (2) ◽  
pp. 102-107
Author(s):  
Do-Yeob Kim ◽  
Min-Su Kim ◽  
Tae-Hoon Kim ◽  
Ghun-Sik Kim ◽  
Hyun-Young Choi ◽  
...  

2021 ◽  
pp. 117-121
Author(s):  
O.A. Nedybaliuk ◽  
T.A. Tereshchenko ◽  
I.I. Fedirchyk ◽  
P.V. Tyshchuk ◽  
V.P. Demchina

The article presents the results of the investigation of the reforming of ethanol into synthesis gas using a plasmacatalytic system with either AC or DC wide-aperture rotating gliding discharge. Current and voltage oscillograms of the wide-aperture rotating gliding discharge were measured. The time-dependence of the instantaneous power of the discharge in the air was built. The photographs of the discharge in the airflow and discharge during the ethanol reforming were compared. The optical emission spectra of the plasmas of the torches of AC and DC wide-aperture rotating gliding discharges were studied. The rotational and vibrational temperatures of the plasma torch in the reaction chamber were determined. The results of the gas-chromatography of the synthesis gas produced during the plasm-catalytic reforming of ethanol using either AC or DC rotating gliding discharge are presented.


1990 ◽  
Vol 39 (12) ◽  
pp. 1965
Author(s):  
ZHANG FANG-QING ◽  
ZHANG YA-FEI ◽  
YANG YING-HU ◽  
LI JING-QI ◽  
CHEN GUANG-HUA ◽  
...  

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