A SiGe BiCMOS Class A power amplifier targeting 5.5GHz application

2011 Asia Pacific Conference on Postgraduate Research in Microelectronics & Electronics ◽

10.1109/primeasia.2011.6075075 ◽

2011 ◽

Author(s):

Yan Qiong ◽

Hua Lin ◽

Chen Lei ◽

Ruan Ying ◽

Su Jie ◽

...

Keyword(s):

Power Amplifier ◽

Class A ◽

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Design of Class-A RF Power Amplifier for S-Band

SSRN Electronic Journal ◽

10.2139/ssrn.3509109 ◽

2019 ◽

Author(s):

Lakshmi Kanth S ◽

Jeevith S H

Keyword(s):

Power Amplifier ◽

Rf Power ◽

Rf Power Amplifier ◽

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Design flow for a SiGe BiCMOS based power amplifier

2009 International Semiconductor Conference ◽

10.1109/smicnd.2009.5336537 ◽

2009 ◽

Author(s):

Mladen Bozanic ◽

Saurabh Sinha ◽

Monuko du Plessis ◽

Alexandru Muller

Keyword(s):

Power Amplifier ◽

Design Flow ◽

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A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 42nd European Microwave Conference ◽

10.23919/eumc.2012.6459375 ◽

2012 ◽

Author(s):

Roee Ben Yishay ◽

Roi Carmon ◽

Oded Katz ◽

Benny Sheinman ◽

Danny Elad

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2015.7337742 ◽

2015 ◽

Author(s):

Seyed Yahya Mortazavi ◽

Kwang-Jin Koh

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2016.7508314 ◽

2016 ◽

Author(s):

Apostolos Samelis ◽

Edward Whittaker ◽

Michael Ball ◽

Alasdair Bruce ◽

John Nisbet ◽

...

Keyword(s):

Power Amplifier ◽

Flip Chip ◽

Fully Integrated ◽

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A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits ◽

10.1109/rfic.2005.1489204 ◽

2005 ◽

Author(s):

N. Shiramizu ◽

T. Masuda ◽

M. Tanabe ◽

K. Washio

Keyword(s):

Low Power ◽

Power Amplifier ◽

Low Noise ◽

Bicmos Technology ◽

Full Band ◽

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A fully integrated 2.4GHz CMOS high power amplifier using parallel class A&B power amplifier and power-combining transformer for WiMAX application

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2013.06.004 ◽

2013 ◽

Vol 67 (12) ◽

pp. 1030-1037 ◽

Author(s):

Ahmad Rahati Belabad ◽

Nasser Masoumi ◽

Shahin J. Ashtiani

Keyword(s):

Power Amplifier ◽

Power Combining ◽

Fully Integrated ◽

Parallel Class ◽

Class A ◽

High Power Amplifier

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A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2015.7337787 ◽

2015 ◽

Author(s):

Roee Ben Yishay ◽

Danny Elad

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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Class A RF Power Amplifier

RF Power Amplifiers ◽

10.1002/9781118844373.ch2 ◽

2014 ◽

pp. 65-116

Keyword(s):

Power Amplifier ◽

Rf Power ◽

Rf Power Amplifier ◽

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A K-/Ka-Band 21.4 dBm Power Amplifier with Four-Way Twisted Combiner in $0.13\ \mu\mathrm{m}$ SiGe BiCMOS

2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) ◽

10.1109/icmmt45702.2019.8992517 ◽

2019 ◽

Author(s):

Yuanhui Gu ◽

Chenxi Zhao ◽

Hongyan Tang ◽

Dong Chen ◽

Xiaoning Zhang ◽

...

Keyword(s):

Power Amplifier ◽

Ka Band ◽

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