scholarly journals Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

Author(s):  
E.A. Schiff
2011 ◽  
Vol 181-182 ◽  
pp. 328-331
Author(s):  
Ming Ji Shi ◽  
Lei Xiong ◽  
Lan Li Chen

It is necessary to improve the open circuit voltage of amorphous silicon solar cells for its applications. In this paper, we discuss the effects of hydrogen plasma treatment on the P layer and the performance of the amorphous silicon solar cells. The result shows that the open circuit voltage increased by 0.0257V, the fill factor increased by 0.039 and the energy conversion efficiency increased by 9%. The highest VOCwe got was 0.99V. Treating P layer with hydrogen plasma has been demonstrated to result in materials with improved crystalline volume fraction which was very effective to increase the light absorption of the intrinsic layer. What is more, it could be easily integrated into the amorphous silicon solar cell mass production process.


2003 ◽  
Vol 762 ◽  
Author(s):  
K. Zhu ◽  
J. Yang ◽  
W. Wang ◽  
E. A. Schiff ◽  
J. Liang ◽  
...  

AbstractWe describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.


2005 ◽  
Vol 862 ◽  
Author(s):  
Jianjun Liang ◽  
E. A. Schiff ◽  
S. Guha ◽  
B. Yan ◽  
J. Yang

AbstractWe present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.


2017 ◽  
Vol 10 (5) ◽  
pp. 1134-1141 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Tiantian Li ◽  
Changchun Wei ◽  
Baozhang Li ◽  
...  

A highly efficient quadruple-junction silicon based thin-film solar cell with a remarkably high open-circuit voltage was demonstrated to inspire functional photoelectrical devices for environmental applications.


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