thermionic emission model
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Mechanism of Contact Electrification

2021 ◽  
Vol 30 (1/2) ◽  
pp. 2-6
Author(s):  
Young-Joon KO ◽  
Dong Woo LEE ◽  
Jonghoon JUNG
Keyword(s):  
Charge Transfer ◽  
Thermionic Emission ◽  
Force Model ◽  
Emission Model ◽  
Intermolecular Force ◽  
Important Research ◽  
Charge Transfer Mechanism ◽  
Contact Electrification ◽  
Schottky Model ◽  
Thermionic Emission Model

Contact electrification has been a well-known phenomenon since B.C. 300. However, the origin of triboelectric charge and the charge transfer mechanism are not well understood. To date, the thermionic emission model, Schottky model, flexoelectric model, and intermolecular force model have been proposed for the contact electrification in conductors, semiconductors, and insulators. This article briefly introduces several important research results on the simple-seeming, but baffling, topic of contact electrification.

scholarly journals Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky-Barrier Devices

2020 ◽  
Vol 14 (5) ◽  
Author(s):  
Calvin Pei Yu Wong ◽  
Cedric Troadec ◽  
Andrew T.S. Wee ◽  
Kuan Eng Johnson Goh
Keyword(s):  
Schottky Barrier ◽  
Thermionic Emission ◽  
Emission Model ◽  
Thermionic Emission Model

Analysis of the back contact properties of Cu(In,Ga)Se 2 solar cells employing the thermionic emission model

2015 ◽  
Vol 582 ◽  
pp. 332-335 ◽  
Author(s):  
Nils Neugebohrn ◽  
Maria S. Hammer ◽  
Janet Neerken ◽  
Jürgen Parisi ◽  
Ingo Riedel
Keyword(s):  
Solar Cells ◽  
Thermionic Emission ◽  
Emission Model ◽  
Back Contact ◽  
Thermionic Emission Model

Thermionic emission model for contact resistance in organic field-effect transistor

2009 ◽  
Vol 518 (2) ◽  
pp. 795-798 ◽  
Author(s):  
Martin Weis ◽  
Motoharu Nakao ◽  
Jack Lin ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thermionic Emission ◽  
Emission Model ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Thermionic Emission Model

Study of Electrical Transport Across Interfaces between Wide Gap Semiconductor and Metal Oxides

1997 ◽  
Vol 474 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
R. P. Sharma ◽  
S. Choopun ◽  
M. J. Downes ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Electrical Transport ◽  
Thermionic Emission ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Emission Model ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Wide Gap ◽  
Thermionic Emission Model

ABSTRACTWe have grown YBa2Cu3O7 (YBCO) and Pr1.85Ce0.15CuO4 (PCCO) polycrystalline films on n-type GaN using pulsed laser deposition. The diodes fabricated out of these heterostructures exhibited a strong rectifying behavior with transport characteristics that were found to fit well to the thermionic emission model. The effective barrier heights for YBCO and PCCO based diodes were found to be 788 meV and 236 meV, respectively. Rutherford Backscattering structural analysis of the heterostructures is also discussed.

Thermionic emission model of electron gate current in submicron NMOSFETs

1997 ◽  
Vol 44 (1) ◽  
pp. 129-138 ◽  
Author(s):  
K. Hasnat ◽  
Choh-Fei Yeap ◽  
S. Jallepalli ◽  
S.A. Hareland ◽  
W.-K. Shih ◽  
...  
Keyword(s):  
Thermionic Emission ◽  
Emission Model ◽  
Gate Current ◽  
Thermionic Emission Model
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