Sputter deposited p-type nickel oxide thin films as an anode buffer layer in organic solar cells

Author(s):  
Dong-Ho Kim ◽  
Jae-Wook Kang ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Sun-Young Park ◽  
...  
2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang

2013 ◽  
Vol 04 (01) ◽  
pp. 123-133 ◽  
Author(s):  
Pedro Pablo Zamora ◽  
Fernando Raul Díaz ◽  
Maria Angelica del Valle ◽  
Linda Cattin ◽  
Guy Louarn ◽  
...  

2010 ◽  
Vol 23 (3) ◽  
pp. 313-316 ◽  
Author(s):  
Ryo Morioka ◽  
Kei Yasui ◽  
Masaki Ozawa ◽  
Keisuke Odoi ◽  
Hisashi Ichikawa ◽  
...  

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.


2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.


Sign in / Sign up

Export Citation Format

Share Document