Characterization and modeling of low temperature surface passivation for interdigitated back contact silicon hetero-junction solar cell

Author(s):  
Brent Shu ◽  
Ujjwal Das ◽  
Steven Hegedus ◽  
Robert Birkmire
Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.


1996 ◽  
Vol 40 (4) ◽  
pp. 297-345 ◽  
Author(s):  
C. Leguijt ◽  
P. Lölgen ◽  
J.A. Eikelboom ◽  
A.W. Weeber ◽  
F.M. Schuurmans ◽  
...  

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