Selected area crystallization of amorphous Si and Ge thin films on glass substrates for solar cell and 3D-optoelectronic applications

Author(s):  
Husam Abu-Safe ◽  
Alan Hickerson ◽  
Hui Zhong ◽  
Hameed Naseem ◽  
Shui-Qing Yu
1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O’brien ◽  
Markus R. Heinrich ◽  
David J. Otway ◽  
Odile Robbe ◽  
Alexander Bayer ◽  
...  

AbstractWe have been studying new approaches to conventional Chemical Bath Deposition (CBD) of chalcogenide containing materials, using continuous circulation and replenishment of CBD solution over a heated substrate. Crystalline thin films produced by this method offer potential for use in solar cell devices or other optoelectronic applications. Films of CdS, ZnS and the ternary material CdxZn1−xS have been deposited on TO-glass substrates. In this paper we demonstrate our approach for the deposition of CdS films. These have been characterized by XPS, SEM, XRD and UV/vis spectroscopy and shown to be good quality. The films have been used to fabricate Au/CdTe/CdS/TO-glass solar cells of efficiency 10.1% under AMl.5 illumination.


2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.


2021 ◽  
pp. 4425-4429
Author(s):  
Rajaa Obayes Abdulsada ◽  
Thamir A.A. Hassan

   In this study, titanium dioxide (TiO2 (are synthesized by sol– gel simple method. Thin films of sol, gel, and sol- gel on relatively flat glass substrates are applied with Spin coating technique with multilayers. The optical and morphological properties (studied using AFM) of TiO2 layers show good properties, with particles diameters less than 4 nm for all prepared samples and have maximum length 62 nm for TiO2 gel thin films of three layers. The results show low roughness values for all films especially for 4 layers sol (8.37nm), which improve the application in dye sensitive solar cell (DSSc)         .  


2015 ◽  
Vol 773-774 ◽  
pp. 647-651
Author(s):  
Noor Sakinah Khalid ◽  
Siti Harwani Ishak ◽  
Mohd Khairul Ahmad

Titanium oxide (TiO2) thin films were deposited onto glass substrates by spray pyrolysis method. The thin films were deposited at three different annealing time; 1, 5 and 10 hours at 400°C. The structural and electrical properties were characterized using FESEM and I-V characteristic. Polycrystalline thin film with anatase crystal structure, as evidenced from X-ray diffraction pattern, was obtained with major reflection along (101). Electrical properties have been studied by means of electrical resistivity. The dark resistivity had been measured as a function of the film thickness, d. The resistivity of samples had been found to decrease with decreasing thickness. Thus, TiO2 is one of the most promising candidates for relatively low cost, simple manufacture for solar cell.


1994 ◽  
Vol 337 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
M. Eizenberg ◽  
R. Weil ◽  
...  

Thin films of amorphous Si1−xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and ß-Sn which formed at the a-Si1−xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1−xGex:H films was found: at low temperatures (T≤475°C) the Si-rich layers were more reactive, whereas at T≥475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1−xGex:H/SnO2 contacts.PACS: 61.43.Dq; 78.66; 82.65.-i; 82.65.Fr; 82.65.Yh


2014 ◽  
Vol 1670 ◽  
Author(s):  
José Escorcia-García ◽  
Enue Barrios-Salgado ◽  
M.T.S. Nair ◽  
P.K. Nair

ABSTRACTWe report a stable CdS/Sb2S3/SnSe heterojunction thin film solar cell deposited on SnO2:F (FTO) – coated glass substrates. Thermal evaporation at 10-5 Torr with substrate temperature of 400 °C was used to deposit Sb2S3 and SnSe thin films of 450 nm and 160 nm, respectively. Thin film Sb2S3 has an optical band gap (Eg) of 1.48 eV and photoconductivity (σp) of 4x10-7 Ω-1 cm-1 and thin film SnSe has an Eg of 1.28 eV and σp of 2 Ω-1 cm-1. The chemically deposited CdS thin film heated at 400 °C shows an Eg of 2.34 eV and σp of 0.1 Ω-1 cm-1. Stabilized solar cell structures with these thin films, FTO/CdS/Sb2S3/SnSe/C-Ag, showed open circuit voltage (Voc) of 0.60 V, short circuit current density (Jsc) of 5.51 mA/cm2 and power conversion efficiency (η) of 0.96% with a fill factor FF of 0.29. In the absence of the SnSe layer, Jsc decreases to 4.77 mA/cm2.


2007 ◽  
Vol 1012 ◽  
Author(s):  
David Avellaneda ◽  
M. T. S. Nair ◽  
P. K. Nair

AbstractWe report photovoltaic cell structures on SnO2:F (TCO) coated glass substrates. Thin films of CdS, SnS, and CuS or PbS were deposited sequentially from chemical baths to produce the solar cell structures: SnO2:F-CdS- SnS (A)-CuS-Ag; SnO2:F-CdS- SnS (A)-PbS-Ag; and SnO2:F-CdS- SnS (B)-PbS-Ag. Heating SnS-CuS films results in the formation of Cu2SnS3, and sequential depositions of SnS and PbS to obtain solar cells produce stratified layers as required for solar cells. The photovoltaic characteristics, Voc 340 mV and Jsc 6 mA/cm2 in these structures suggest that absorber thin films based on tin sulfide are worth investigating as a relatively abundant and non-toxic material for solar cells.


2010 ◽  
Author(s):  
P. Anithambigai ◽  
S. Shanmugan ◽  
D. Mutharasu ◽  
Kamarulazizi Ibrahim ◽  
A. K. Yahya ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document