Reduction of Sn02 by A-Si1-XGeX

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
M. Eizenberg ◽  
R. Weil ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Low Temperatures ◽  
Tin Dioxide ◽  
Silicon Oxide ◽  
Strong Dependence ◽  
Reduction Process ◽  
Glass Substrates ◽  
Rf Glow Discharge ◽  
Amorphous Si

Thin films of amorphous Si1−xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and ß-Sn which formed at the a-Si1−xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1−xGex:H films was found: at low temperatures (T≤475°C) the Si-rich layers were more reactive, whereas at T≥475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1−xGex:H/SnO2 contacts.PACS: 61.43.Dq; 78.66; 82.65.-i; 82.65.Fr; 82.65.Yh

scholarly journals Heat Treatment Effect on Magnetic Microstructure of Fe73.9Cu1Nb3Si13.2B8.9 Thin Films

2018 ◽  
Vol 185 ◽  
pp. 04001
Author(s):  
Evgeniya Mikhalitsyna ◽  
Ivan Zakharchuk ◽  
Ekaterina Soboleva ◽  
Pavel Geydt ◽  
Vasiliy Kataev ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Amorphous State ◽  
Magnetic Domain ◽  
Domain Size ◽  
Magnetic Domains ◽  
Magnetic Microstructure ◽  
Glass Substrates ◽  
Radio Frequency Sputtering ◽  
Anisotropy Model

Fe73.9Cu1Nb3Si13.2B8.9 (Finemet) thin films were deposited on the glass substrates by means of radio frequency sputtering. The films thickness was varied from 10 to 200 nm. Heat treatment at temperatures of 350, 400 and 450 °C were performed for 30 minutes in order to control thin film structural state. The X-ray powder diffractometry revealed that the crystallization of α-FeSi nanograins took place only at 450 °C whilst the other samples stayed in the amorphous state. Relation between the structure and magnetic properties of the films was discussed in the framework of random magnetic anisotropy model and the concept of stochastic magnetic domains. The latter was investigated using magnetic force microscopy (MFM). MFM data showed formation of such magnetic domains only in samples thermally treated at 450 °C. There was a tendency of the magnetic domain size reduction with the thickness decrease.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

The Effect of Pressure on the Microstructural Behavior on SnO2 Thin Films Deposited by RF Sputtering

2008 ◽  
Author(s):  
Mehmet Oguz Guler ◽  
Mirac Alaf ◽  
Deniz Gultekin ◽  
Hatem Akbulut ◽  
Ahmet Alp
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Rf Sputtering ◽  
Transparent Conductors ◽  
Grain Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Sno2 Thin Films ◽  
Steel Substrates ◽  
Gas Pressures

Tin oxide has multiple technological applications including Li-ion batteries, gas sensors, optoelectronic devices, transparent conductors and solar cells. In this study tin dioxide (SnO2) thin films were deposited on glass substrates by RF sputtering process in the oxygen (O2) and argon (Ar) plasma medium. The deposition of the thin SnO2 films was carried out by RF sputtering from SnO2 targets. Before deposition the system was evacuated to 10−4 torr vacuum level and backfilled with Ar. The deposition of the nano structured thin SnO2 films have been performed at different gas pressures. The deposition of the SnO2 was both carried out at different pure argon gas pressures and argon/oxygen mediums with varying oxygen partial pressures. The effect of argon and argon/oxygen partial gas pressures on the grain structure and film thickness were analyzed in the resultant thin films. The deposited thin films both on glass and stainless steel substrates were characterized with scanning electron microscopy (SEM), X-ray diffractometry equipped with multi purpose attachment. The grain size of the deposited layer was determined by X-ray analysis. The Atomic Force Microscopy (AFM) technique was also conducted on the some selected coatings to reveal grain structure and growth behaviors.

Grain Enhancement of Thin Silicon Layers Using Optical Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
B. L. Sopori ◽  
Jeff Alleman ◽  
W. Chen ◽  
T. Y. Tan ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Low Cost ◽  
Optical Processing ◽  
Glass Substrates ◽  
Coated Substrate ◽  
Grain Sizes ◽  
Fine Grain ◽  
A New Technique ◽  
Short Time

ABSTRACTWe describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (∼ 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Fabrication of Electrically Active Si-based Thin Films by Pulsed Laser Deposition of SiO/C Dual Targets

2008 ◽  
Vol 1148 ◽  
Author(s):  
Yusaburo Ono ◽  
Yushi Kato ◽  
Yasuyuki Akita ◽  
Makoto Hosaka ◽  
Naoki Shiraishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Si Nanocrystals ◽  
Current Voltage ◽  
Conduction Behavior

AbstractWe investigated the fabrication of Si nanocrystals, including thin films, by annealing the SiO/C/SiO thin films in an Ar atmosphere. The SiO/C/SiO trilayered thin films were deposited on α-Al2O3 (0001), Si (111), or ITO-coated borosilicate glass substrates at room temperature by pulsed laser deposition using dual sintered SiO and graphite targets. The SiO/C/SiO thin films subjected to heat treatment at 500°C included nanocrystalline Si. Measurements by synchrotron radiation X-ray diffraction indicated the formation of Si nanocrystals having a size of 5–10 nm. Fourier transform infrared spectra showed that Si–O stretching and vibrational peak intensities of the as-deposited thin film decreased remarkably after annealing. The C layer in the SiO/C/SiO trilayered thin films is considered to play a role in enhancing the chemical reaction that produces Si nanocrystals through reduction of SiO during heat treatment. The annealed SiO/C-based thin films, including Si nanocrystals, exhibited photosensitive conduction behavior in current–voltage measurements.

Photoenhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp

1986 ◽  
Vol 75 ◽  
Author(s):  
Paul A. Robertson ◽  
W. I. Milne
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Uv Light ◽  
Single Crystal Silicon ◽  
Film Surface ◽  
Oxide Thin Films ◽  
Crystal Silicon ◽  
Discharge Lamp ◽  
Rf Glow Discharge ◽  
Nitrogen Discharge

AbstractThis paper describes the optical and electrical properties of silicon oxide thin films produced using a novel photoenhanced deposition technique. Since there is no damage to the growing film surface from energetic ions, this process has the potential to produce better semiconductor/insulator interfaces than those grown using conventional RF glow discharge techniques. The deposition system is comprised of a windowless nitrogen discharge lamp contained within the reaction vessel. This unified approach allows the low wavelength UV light from the lamp to couple directly into the reaction gases without attenuation by a window material or the need for mercury sensitisation. Thin films of silicon oxide have been deposited onto single crystal silicon wafer substrates from a nitrous oxide/monosilane reaction gas mixture. The deposition rate and physical properties of films produced in this way are comparable to those of high quality insulator films deposited by plasma enhanced CVD techniques. The results of electrical tests indicate that this material could be used as a low temperature deposited insulator for thin film devices.

Stress of Tio2 Thin Films Produced by Different Deposition Techniques

1993 ◽  
Vol 308 ◽  
Author(s):  
C. Ottermann ◽  
J. Otto ◽  
U. Jeschkowski ◽  
O. Anderson ◽  
M. Heming ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Film Stress ◽  
Process Conditions ◽  
Tio2 Thin Films ◽  
Structure Relaxation ◽  
Glass Substrates ◽  
Relaxation Effects

ABSTRACTStress in thin films has been measured very precisely (< 10 MPa) by analysing the curvature of quartz glass substrates before and after film deposition by means of a ZYGO Mark IV interferometer system. TiO2 films of approximately 100 nm thickness were prepared by reactive evaporation (RE), reactive ion plating (IP), plasma impulse chemical vapor deposition (PICVD) and spin coating (SC). Large variations in stress are found for different coating techniques and deposition conditions. This can be correlated to differences in optical properties, film density and crystalline structure. Relaxation effects and the influence of thermal treatment are also studied. The crystallization of amorphous TiO2 during heat treatment is accompanied by significant changes in film stress. The crystal size and morphology of TiO2 films after heat treatment strongly depend on the deposition technique and process conditions.

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