Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells

Author(s):  
Yushuai Dai ◽  
Stephen Polly ◽  
Staffan Hellstroem ◽  
David V. Forbes ◽  
Seth M. Hubbard
1995 ◽  
Vol 405 ◽  
Author(s):  
R. Mu ◽  
A. Ueda ◽  
Y -S. Tung ◽  
D. O. Henderson ◽  
Jane G. Zhu ◽  
...  

AbstractWe have investigated quantum-confined Stark effect (QCSE) on GaAs and CdSe nanocrystals and the electric field effect on surface phonons of GaAs nanocrystals isolated in sapphire substrates. For a strongly quantum-confined system, GaAs quantum dots illustrated no exciton energy shift. When the excitons are weakly confined in CdSe, a ∼ 2 meV red-shift was observed. On the other hand, the results of the electric field effect on surface phonon are dramatic both phonon oscilator strength and freqnency. As the strength of the electric field increases, the total intensity of the surface phonon decreases. At the same time, an additional peak was also observed at 277 cm-1, which is about 3 cm-1 above the center frequency of the surface phonon mode of GaAs nanocrystals embedded in a sapphire host.


2013 ◽  
Vol 205-206 ◽  
pp. 346-351 ◽  
Author(s):  
Ruy S. Bonilla ◽  
Christian Reichel ◽  
Martin Hermle ◽  
Peter R. Wilshaw

Effective reduction of front surface carrier recombination is essential for high efficiency silicon solar cells. Dielectric films are normally used to achieve such reduction. They provide a) an efficient passivation of surface recombination and b) an effective anti-reflection layer. The conditions that produce an effective anti-reflection coating are not necessarily the same for efficient passivation, hence both functions are difficult to achieve simultaneously and expensive processing steps are normally required. This can be overcome by enhancing the passivation properties of an anti-reflective film using the electric field effect. Here, we demonstrate that thermally grown silicon dioxide is an efficient passivation layer when chemically treated and electrically charged, and it is stable over a period of ten months. Double layers of SiO2 and SiN also provided stable and efficient passivation for a period of a year when the sample is submitted to a post-charge anneal. Surface recombination velocity upper limits of 9 cm/s and 19 cm/s were inferred for single and double layers respectively on n-type, 5 Ωcm, Cz-Si.


2015 ◽  
Vol 29 (30) ◽  
pp. 1550211 ◽  
Author(s):  
Rym Ridene ◽  
Nouha Mastrour ◽  
Dhouha Gamra ◽  
Habib Bouchriha

In this paper, dispersion energies of Wannier–Mott, Frenkel and mixed exciton formation at the interface in nanocomposite organic–inorganic parabolic quantum dots are investigated theoretically taking account of the interaction between the two excitonic states and electric field effect. Illustration is given for three nanocomposites highly studied experimentally, such as organic P3HT combined respectively with inorganic (CdSe, ZnSe, ZnO) parabolic quantum dots. It is shown that the parameter governing the interaction between the individual exciton states depends on the inorganic quantum dot and can be controlled by the electric field. The results are consistent with the available experimental data.


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