Fault Density, Fault Depth and Fault Multiplicity: The Reward of Discernment

Author(s):  
Besma Khaireddine ◽  
Aleksandr Zakharchenko ◽  
Ali Mili
Keyword(s):  
Geophysics ◽  
1966 ◽  
Vol 31 (2) ◽  
pp. 372-397 ◽  
Author(s):  
L. P. Geldart ◽  
Denis E. Gill ◽  
Bijon Sharma

A simplified formula is given for the gravity effect of a horizontal semi‐infinite block truncated by a dipping plane. This formula is used to obtain curves illustrating the gravity anomalies for blocks having different thicknesses and depths truncated by planes dipping at various angles. By combining two blocks, results are obtained for faulted horizontal beds for a wide range of bed thicknesses and depths, fault displacements and dips. These should be useful as guides in interpreting fault anomalies, and in planning gravity programs intended to map faults. The most striking feature of the curves is the marked effect of the dip of the fault plane on the curves for faulted beds. The asymmetry of the fault curves is related mainly to the dip and can be used to determine dips between 30 and 90 degrees. If the dip of the fault, density contrast, and bed thickness are known, the depths to the bed on the two sides of the fault are given by the sizes and positions of the gravity maximum and minimum.


2017 ◽  
Vol 96 (16) ◽  
Author(s):  
Rawa Tanta ◽  
Caroline Lindberg ◽  
Sebastian Lehmann ◽  
Jessica Bolinsson ◽  
Miguel R. Carro-Temboury ◽  
...  

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.


2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.


1997 ◽  
Vol 70 (2) ◽  
pp. 237-239 ◽  
Author(s):  
S. Heun ◽  
J. J. Paggel ◽  
L. Sorba ◽  
S. Rubini ◽  
A. Franciosi ◽  
...  

2017 ◽  
Vol 111 (25) ◽  
pp. 253101 ◽  
Author(s):  
Okkyun Seo ◽  
Osami Sakata ◽  
Jae Myung Kim ◽  
Satoshi Hiroi ◽  
Chulho Song ◽  
...  

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