Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions

2011 ◽  
Author(s):  
Alessio Griffoni ◽  
Paul Zuber ◽  
Petr Dobrovolny ◽  
Philippe J. Roussel ◽  
Dimitri Linten ◽  
...  
Keyword(s):  
Soft Error ◽  
Nanometer Scale ◽  
Process Variability ◽  
Radiation Induced

scholarly journals Sleep Transistors to Improve the Process Variability and Soft Error Susceptibility

2019 ◽  
Author(s):  
Alexandra L. Zimpeck ◽  
Cristina Meinhardt ◽  
Laurent Artola ◽  
Guillaume Hubert ◽  
Fernanda L. Kastensmidt ◽  
...  
Keyword(s):  
Soft Error ◽  
Process Variability ◽  
Sleep Transistors

Impact of radiation-induced soft error on embedded cryptography algorithms

2021 ◽  
pp. 114349
Author(s):  
Vitor Bandeira ◽  
Jack Sampford ◽  
Rafael Garibotti ◽  
Matheus Garay Trindade ◽  
Rodrigo Possamai Bastos ◽  
...  
Keyword(s):  
Soft Error ◽  
Radiation Induced

Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices

2015 ◽  
Author(s):  
Soonyoung Lee ◽  
Ilgon Kim ◽  
Sungmock Ha ◽  
Cheong-sik Yu ◽  
Jinhyun Noh ◽  
...  
Keyword(s):  
Error Rate ◽  
Soft Error ◽  
Soft Error Rate ◽  
Radiation Induced

Impact of Single-Event Upsets in Deep-Submicron Silicon Technology

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 117-120 ◽  
Author(s):  
Robert Baumann
Keyword(s):  
Soft Errors ◽  
Deep Submicron ◽  
Soft Error ◽  
Mitigation Strategies ◽  
Single Event ◽  
Radiation Mechanisms ◽  
Silicon Technology ◽  
Single Event Upsets ◽  
Radiation Induced ◽  
Considerable Concern

AbstractThe once-ephemeral soft error phenomenon has recently caused considerable concern for manufacturers of advanced silicon technology. Soft errors, if unchecked, now have the potential for inducing a higher failure rate than all of the other reliability-failure mechanisms combined. This article briefly reviews the three dominant radiation mechanisms responsible for soft errors in terrestrial applications and how soft errors are generated by the collection of radiation-induced charge. Scaling trends in the soft error sensitivity of various memory and logic components are presented, along with a consideration of which applications are most likely to require intervention. Some of the mitigation strategies that can be employed to reduce the soft error rate in these devices are also discussed.

Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects

2017 ◽  
Vol 51 (11) ◽  
pp. 1435-1438 ◽  
Author(s):  
I. Yu. Zabavichev ◽  
E. S. Obolenskaya ◽  
A. A. Potekhin ◽  
A. S. Puzanov ◽  
S. V. Obolensky ◽  
...  
Keyword(s):  
Charge Carriers ◽  
Nanometer Scale ◽  
Semiconductor Structures ◽  
Radiation Induced ◽  
Induced Defects

scholarly journals Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology

2017 ◽  
Vol 76-77 ◽  
pp. 660-664 ◽  
Author(s):  
Y.Q. de Aguiar ◽  
L. Artola ◽  
G. Hubert ◽  
C. Meinhardt ◽  
F.L. Kastensmidt ◽  
...  
Keyword(s):  
Soft Error ◽  
Radiation Induced

Origin analysis of thermal neutron soft error rate at nanometer scale

2015 ◽  
Vol 33 (2) ◽  
pp. 020604 ◽  
Author(s):  
Takashi Yamazaki ◽  
Takashi Kato ◽  
Taiki Uemura ◽  
Hideya Matsuyama ◽  
Yoko Tada ◽  
...  
Keyword(s):  
Thermal Neutron ◽  
Error Rate ◽  
Soft Error ◽  
Nanometer Scale ◽  
Soft Error Rate ◽  
Origin Analysis
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