Design, Simulation and Measurement Analysis on the S-parameters of an Inductively-degenerated Common-source Open-drain Cascode Low Noise Amplifier

Author(s):  
Norlaili Mohd. Noh ◽  
Tun Zainal Azni Zulkifli
Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.


2011 ◽  
Vol 02 (04) ◽  
pp. 257-261 ◽  
Author(s):  
Chia-Song Wu ◽  
Tah-Yeong Lin ◽  
Chien-Huang Chang ◽  
Hsien-Ming Wu

Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.


In the current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split into multiple fingers using multi-finger technology. The schematic is captured using ADS. The performance of LNA for various technologies has been analyzed using PTM 180 nm, PTM 130 nm and PTM 90 nm models. The amplifier with single transistor achieves minimum noise figure of 0.178 dB noise figure and maximum gain of 20.045 dB using 130 nm model technology for Bluetooth applications. Similarly 0.288 dB of minimum noise figure and peak gain of 17.971 dB are obtained using multi-finger MOSFET of PTM 90 nm technologyrespectively.The reverse isolation (S12) below -50 dB is achieved.


This discourse used 45nm CMOS technology to design a Low noise amplifier for a Noise figure < 2dB and gain greater than 13dB at the 60GHz unlicensed band of frequency. A single stage, primary cascode LNA is modeled and its small signal model is analyzed. Common source structure is hired in the driver stage to escalate the output power with single stage contours. To enhance small signal gain, simple active transistor feedback and cascode feedback configurations are designed and appended to the basic LNA. In addition to this, current re-use inductor is designed and added to the cascode amplifier which is deliberated to give low power and low noise figure. Small signal analysis of simple active transistor feedback and current re-use inductor has been presented. The measurement results indicated that the input match and the output gain at 60GHz achieves -8dB and 13dB respectively with the supply voltage of 900mV. The frequency response obtained is a narrow band response with 6GHz of bandwidth. The circuit is simulated by Cadence Virtuoso tool. The layout of the related circuit is drawn by means of the Virtuoso Layout editor with total size of 0.1699μm2.


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