Impacts of the pads, ESD diodes and package parasitic on the noise figure and gain of a common source low noise amplifier

2010 ◽  
Author(s):  
Roghoyeh Salmeh
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Noise Amplifier

scholarly journals Design And Analysis Of CMOS Low Noise Amplifier Circuit For 5-GHz Cascode and Folded Cascode In 180nm Technology

2018 ◽  
Vol 7 (3) ◽  
pp. 143
Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Amplifier Circuit ◽  
Folded Cascode ◽  
Noise Amplifier ◽  
5 Ghz

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.

scholarly journals Design And Analysis Of CMOS Low Noise Amplifier Circuit For 5-GHz Cascode and Folded Cascode In 180nm Technology

2018 ◽  
Vol 7 (3) ◽  
pp. 149
Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Amplifier Circuit ◽  
Folded Cascode ◽  
Noise Amplifier ◽  
5 Ghz

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.

scholarly journals Performance Analysis of Inductive Source Degeneration Low Noise Amplifier using Multi-finger Technique

2019 ◽  
Vol 8 (9) ◽  
pp. 1636-1642
Keyword(s):  
Performance Analysis ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Noise Amplifier ◽  
Minimum Noise ◽  
Minimum Noise Figure ◽  
Source Degeneration ◽  
Peak Gain

In the current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split into multiple fingers using multi-finger technology. The schematic is captured using ADS. The performance of LNA for various technologies has been analyzed using PTM 180 nm, PTM 130 nm and PTM 90 nm models. The amplifier with single transistor achieves minimum noise figure of 0.178 dB noise figure and maximum gain of 20.045 dB using 130 nm model technology for Bluetooth applications. Similarly 0.288 dB of minimum noise figure and peak gain of 17.971 dB are obtained using multi-finger MOSFET of PTM 90 nm technologyrespectively.The reverse isolation (S12) below -50 dB is achieved.

scholarly journals Design and Implementation of Low Noise Amplifier At 60ghz using Current Mirror Feedback

2019 ◽  
Vol 8 (9S3) ◽  
pp. 249-254
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Common Source ◽  
Small Signal ◽  
Total Size ◽  
Noise Amplifier

This discourse used 45nm CMOS technology to design a Low noise amplifier for a Noise figure < 2dB and gain greater than 13dB at the 60GHz unlicensed band of frequency. A single stage, primary cascode LNA is modeled and its small signal model is analyzed. Common source structure is hired in the driver stage to escalate the output power with single stage contours. To enhance small signal gain, simple active transistor feedback and cascode feedback configurations are designed and appended to the basic LNA. In addition to this, current re-use inductor is designed and added to the cascode amplifier which is deliberated to give low power and low noise figure. Small signal analysis of simple active transistor feedback and current re-use inductor has been presented. The measurement results indicated that the input match and the output gain at 60GHz achieves -8dB and 13dB respectively with the supply voltage of 900mV. The frequency response obtained is a narrow band response with 6GHz of bandwidth. The circuit is simulated by Cadence Virtuoso tool. The layout of the related circuit is drawn by means of the Virtuoso Layout editor with total size of 0.1699μm2.

scholarly journals A concurrent dual-band CMOS low noise amplifier at 2.4/5.2 GHz for WLAN applications

2019 ◽  
Vol 14 (2) ◽  
pp. 555
Author(s):  
S.A.Z. Murad ◽  
A. F. Hasan ◽  
A. Azizan ◽  
A. Harun ◽  
J. Karim
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Notch Filter ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Common Source ◽  
Noise Amplifier

<span>This paper presents a concurrent dual-band CMOS low noise amplifier (LNA) at operating frequency of 2.4 GHz and 5.2 GHz for WLAN applications. The proposed LNA employed cascode common source to obtain high gain using 0.13-µm CMOS technology. The concurrent dual-band frequencies are matched using LC network band-pass and band-stop notch filter at the input and output stages. The filters help to shape the frequency response of the proposed LNA. The simulation results indicate that the LNA achieves a forward gain of 21.8 dB and 14.22 dB, input return loss of -18 dB and -14 dB at 2.4 GHz and 5.2 GHz, respectively. The noise figure of 4.1 dB and 3.5 dB with the input third-order intercept points 7 dBm and 10 dBm are obtained at 2.4 GHz and 5.2 GHz, respectively. The LNA dissipates 2.4 mW power at 1.2 V supply voltage with a chip size of 1.69 mm2.</span>

scholarly journals A Low-Noise Amplifier Utilizing Current-Reuse Technique and Active Shunt Feedback for MedRadio Band Applications

2020 ◽  
pp. 306-316
Author(s):  
Mutanizam Abdul Mubin ◽  
◽  
Arjuna Marzuki
Keyword(s):  
Low Power ◽  
Return Loss ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Cmos Process ◽  
Current Reuse ◽  
Noise Amplifier

In this work, a low-power 0.18-μm CMOS low-noise amplifier (LNA) for MedRadio applications has been designed and verified. Cadence IC5 software with Silterra’s C18G CMOS Process Design Kit were used for all design and simulation work. This LNA utilizes complementary common-source current-reuse topology and subthreshold biasing to achieve low-power operation with simultaneous high gain and low noise figure. An active shunt feedback circuit is used as input matching network to provide a suitable input return loss. For test and measurement purpose, an output buffer was designed and integrated with this LNA. Inductorless design approach of this LNA, together with the use of MOSCAPs as capacitors, help to minimize the die size. On post-layout simulations with LNA die area of 0.06 mm2 and simulated total DC power consumption of 0.5 mW, all targeted specifications are met. The simulated gain, input return loss and noise figure of this LNA are 16.3 dB, 10.1 dB and 4.9 dB respectively throughout the MedRadio frequency range. For linearity, the simulated input-referred P1dB of this LNA is -26.7 dBm while its simulated IIP3 is -18.6 dBm. Overall, the post-layout simulated performance of this proposed LNA is fairly comparable to some current state-of-the-art LNAs for MedRadio applications. The small die area of this proposed LNA is a significant improvement in comparison to those of the previously reported MedRadio LNAs.

scholarly journals Low Noise Amplifier with Improved Gain and Reduced Noise-Figure in 90nm CMOS Technology

2021 ◽  
pp. 85-94
Author(s):  
Dr. Rashmi S B ◽  
Mr. Raghavendra B ◽  
Mr. Sanketh V
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Common Source ◽  
Frequency Range ◽  
Common Gate ◽  
Noise Amplifier

A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented in this paper. The proposed CMOS low noise amplifier (LNA) is designed using common-gate (CG) topology as the first stage to achieve ultra-wideband input matching. The common-gate (CG) is cascaded with common- source (CS) topology with current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power. The Buffer stage is used as output matching network to improve the reflection coefficient. The proposed low noise amplifier (LNA) is implemented using CADENCE Virtuoso Analog and Digital Design Environment tool in 90nm CMOS technology. The LNA provides a forward voltage gain or power gain (S21) of 32.34dB , a minimum noise figure of 2dB, a reverse-isolation (S12) of less than - 38.74dB and an output reflection coefficient (S22) of less than -7.4dB for the entire ultra-wideband frequency range. The proposed LNA has an input reflection coefficient (S11) of less than -10dB for the ultra-wideband frequency range. It achieves input referred 1-dB compression point of 78.53dBm and input referred 3-dB compression point of 13dBm. It consumes only 24.226mW of power from a Vdd supply of 0.7V.

A 79GHz Adaptive Gain Low Noise Amplifier for Radar Receivers

2018 ◽  
Vol 7 (2.24) ◽  
pp. 227
Author(s):  
J Manjula ◽  
A Ruhan Bevi
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
Input Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Common Source ◽  
Adaptive Biasing ◽  
Noise Amplifier

This paper presents an Adaptive Gain 79GHz Low Noise Amplifier (LNA) suitable for Radars applications. The circuit schematic is a two stage LNA consists of Differential cascode configuration followed by a simple common source amplifier with an Adaptive Biasing (ADB) circuit. Adaptive biasing is a three- stage common source amplifier to decrease output voltage as input power increases. The circuit is simulated in 180nm CMOS technology and the simulation results have proved that the circuit operates at the center frequency 79GHz with adaptive biasing for adaptive gain. The gain analysis shows a decrease of 35-30dB with an increase in input power -50 to 0 dB. At 79GHz the circuit has achieved the input reflection coefficient (S11) of -24.7dB, reverse isolation (S12) of -3 dB, forward transmission coefficient (S21) of -2.97dB and output reflection coefficient (S22) of -5.62 dB with the reduced noise figure of 0.9 dB and a power consumption of 236 mW.  

scholarly journals Single Stage 38 GHz LNA using 0.1 μm GaAs HEMT

2019 ◽  
Vol 9 (2S3) ◽  
pp. 274-276
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Common Source ◽  
Active Device ◽  
Noise Amplifier

Design of a 38 GHz low noise amplifier using a single stage common source (SSCS) with source degenerated with inductor topology with gain of 9 dB and noise figure (NF) of 1.5 dB using 0.1 µm GaAs pHEMT as active device is proposed in this paper. CS with source degenerated with inductor topology of 0.1 µm GaAs pHEMT resulted a very low NF compared to other HEMT technologies as well as other CMOS technologies at this RF range.

scholarly journals Linearity improvement of differential CMOS low noise amplifier

2019 ◽  
Vol 14 (1) ◽  
pp. 407
Author(s):  
Maizan Muhamad ◽  
Norhayati Soin ◽  
Harikrishnan Ramiah
Keyword(s):  
Integrated Circuit ◽  
Wireless Lan ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Linearity Improvement ◽  
Noise Amplifier

<p>This paper presents the linearity improvement of differential CMOS low noise amplifier integrated circuit using 0.13um CMOS technology. In this study, inductively degenerated common source topology is adopted for wireless LAN application. The linearity of the single-ended LNA was improved by using differential structures with optimum biasing technique. This technique achieved better LNA and linearity performance compare with single-ended structure. Simulation was made by using the cadence spectre RF tool. Consuming 5.8mA current at 1.2V supply voltage, the designed LNA exhibits S<sub>21</sub> gain of 18.56 dB, noise figure (NF) of 1.85 dB, S<sub>11</sub> of −27.63 dB, S<sub>22</sub> of -34.33 dB, S<sub>12</sub> of −37.09 dB and IIP3 of -7.79 dBm.</p>

Sign in / Sign up

Export Citation Format

Share Document