Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

2007 ◽  
Author(s):  
J. A. Jimenez Tejada ◽  
M. J. Deen ◽  
P. Lara Bullejos ◽  
J. A. Lopez Villanueva ◽  
F. M. Gomez-Campos ◽  
...  
Keyword(s):  
Pn Junctions ◽  
Transient Spectroscopy ◽  
Capacitance Transient

Characterization of Si/Si1−xGex/Si heterostructures by capacitance‐transient spectroscopy

1994 ◽  
Vol 76 (7) ◽  
pp. 4237-4243 ◽  
Author(s):  
J. C. Brighten ◽  
I. D. Hawkins ◽  
A. R. Peaker ◽  
R. A. Kubiak ◽  
E. H. C. Parker ◽  
...  
Keyword(s):  
Transient Spectroscopy ◽  
Capacitance Transient

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Nakamura ◽  
P. Liu ◽  
M. Suhara ◽  
T. Okumura
Keyword(s):  
Chemical Vapor ◽  
Deep Levels ◽  
Yellow Luminescence ◽  
Capacitance Measurements ◽  
Transient Capacitance ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractThe deep levels in both undoped and Si-doped GaN layer grown by metalorganic chemical vapor deposition have been characterized by photocapacitance and transient capacitance spectroscopy. The increase in the photocapacitance was observed in both GaN samples in the range of 1.8 to 2.2 eV. This is due to the photoionization of carriers from the deep levels associated with the yellow luminescence (YL). In addition, the transient capacitance measurements after the photoionization were also performed in the range of 1.8 to 3.4 eV. The notable transient of capacitance was observed at the photon energies of about 2.1 and 3.4 eV, the former could be associated with the change in the charge state of the YL center and latter might stem from some other defects capturing photogenerated carriers. By using the isothermal capacitance transient spectroscopy (ICTS) analysis, the ICTS peaks due to the deep levels associated with YL were detected at about t = 150 s in both GaN samples. In addition, another ICTS peak was detected only in the Si-doped GaN samples. It is considered that this peak is associated with the deep levels deeper than YL levels and the deeper levels originate from defects induced by Si doping.

Characterization of interface states in (Sr, Ca)TiO3−x based ceramics by ICTS analysis

1991 ◽  
Vol 6 (6) ◽  
pp. 1346-1349 ◽  
Author(s):  
Yoshitaka Nakano
Keyword(s):  
Interface States ◽  
Oxidation Temperature ◽  
Trap Level ◽  
Ohmic Conduction ◽  
Chemisorbed Oxygen ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy ◽  
Good Agreement

Isothermal capacitance transient spectroscopy measurements were performed to study the reoxidizing induced change in interface states in (Sr, Ca)TiO3−x based ceramics. A discrete acceptor type trap level was detected with reoxidation below the oxidation temperature of grain surfaces, but two deep levels were detected with reoxidation above this temperature. These ICTS results are in good agreement with the previous report with the DLTS measurements. These interface states are considered to originate from chemisorbed oxygen (O2−, O−) on grain surfaces. The O− and O2− chemisorption levels contribute to the non-ohmic conduction with reoxidizing anneals below and above the oxidation temperature, respectively.

Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy

2002 ◽  
Vol 719 ◽  
Author(s):  
Y. Nakakura ◽  
M. Kato ◽  
M. Ichimura ◽  
E. Arai ◽  
Y. Tokuda
Keyword(s):  
Cross Section ◽  
Thermal Activation ◽  
Deep Level ◽  
Threshold Energy ◽  
Thermal Activation Energy ◽  
Deep Levels ◽  
Optical Cross Section ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize the defects in 3C-SiC on Si. The O-CTS measurement enables us to estimate optical threshold energy and optical cross section for the defects. In the O-CTS spectrum, a peak was observed for photon energy hv larger than 0.5 eV. This peak was thought to be due to the ND1 center, which was also observed by deep level transient spectroscopy (DLTS) and found to have a thermal activation energy of 0.37 eV. The optical cross section for the center increased with hv for hv<0.6 eV and then decreased with increasing hv. The apparent optical threshold energy was about 0.47 eV. Another deep levels which have optical threshold energy of around 1.4 eV were also observed.

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