Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

Investigating Minority-Carrier Traps in p-type Cu(InGa)Se2 Using Deep Level Transient Spectroscopy

2005 ◽  
Vol 865 ◽  
Author(s):  
Steven W. Johnston ◽  
Jehad A. M. AbuShama ◽  
Rommel Noufi
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Thermionic Emission ◽  
Small Peak ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Lower Temperature ◽  
And Shifts ◽  
P Type

AbstractMeasurements of p-type Cu(InGa)Se2 (CIGS) using deep-level transient spectroscopy (DLTS) show peaks associated with minority-carrier traps, even though data were collected using reverse bias conditions not favorable to injecting minority-carrier electrons. These DLTS peaks occur in the temperature range of 50 to 150 K for the rate windows used and correspond to electron traps having activation energies usually in the range of 0.1 to 0.2 eV for alloys of CIS, CGS, and CIGS. The peak values also depend on the number of traps filled. For short filling times of 10 μs to 100 μs, a small peak appears. As the DLTS filling pulse width increases, the peak increases in response to more traps being filled, but it also broadens and shifts to lower temperature suggesting that a possible series of trap levels, perhaps forming a defect band, are present. The peaks usually saturate in a timeframe of seconds. These filling times are sufficient for electrons to fill traps near the interface from the n-type side of the device due to a thermionic emission current. Admittance spectroscopy data for the same samples are shown for comparison.

Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

2016 ◽  
Vol 858 ◽  
pp. 308-311 ◽  
Author(s):  
Giovanni Alfieri ◽  
Andrei Mihaila ◽  
Hussein M. Ayedh ◽  
Bengt Gunnar Svensson ◽  
Pavel Hazdra ◽  
...  
Keyword(s):  
Energy Range ◽  
Minority Carrier ◽  
Deep Level ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Minority Charge Carrier ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
The Impact

In this contribution, we report on the electrical characterization of point defects in 4H-SiC p+in diodes. Ten electrically active levels have been detected in the base region of the devices, by employing Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Of these ten levels, six are majority carrier traps, in the 0.1-1.7 eV energy range below the conduction band edge, and four were minority carrier traps located in the 0.13-0.4 eV energy range above the valence band edge. We found that, during DLTS measurements, both majority and minority carrier traps can be detected and we explain this by considering the behavior of the quasi-Fermi levels. At last, we studied the impact of proton irradiation on the minority charge carrier lifetime.

scholarly journals Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

2005 ◽  
Vol 891 ◽  
Author(s):  
Steven W. Johnston ◽  
Sarah R. Kurtz ◽  
Richard S. Crandall
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Organic Chemical ◽  
Conduction Band Offset ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDilute-nitrogen GaNAs epitaxial layers grown by metal-organic chemical vapor deposition were characterized by deep-level transient spectroscopy (DLTS). For all samples, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.25 to 0.35 eV. The minority-carrier trap density in the p-type material is quantified based on computer simulation of the devices. The simulations show that only about 2% of the traps in the depleted layer are filled during the transient. The fraction of the traps that are filled depends strongly on the depth of the trap, but only weakly on the doping of the layers and on the conduction-band offset. The simulations provide a pathway to obtain semi-quantitative data for analysis of minority-carrier traps by DLTS.

Characterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient Spectroscopy

2011 ◽  
Vol 178-179 ◽  
pp. 100-105
Author(s):  
Teimuraz Mchedlidze ◽  
J. Hendrik Zollondz ◽  
Martin Kittler
Keyword(s):  
Thin Film ◽  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Deep Level ◽  
Film Formation ◽  
Solid Phase Crystallization ◽  
Carrier Traps ◽  
Transient Spectroscopy

Thin crystalline silicon films on glass substrate, fabricated using solid phase crystallization for application in thin-film solar cells, were investigated by deep level transient spectroscopy (DLTS). The analyses of the DLTS spectra obtained during temperature scans revealed presence of carrier traps related to dislocations in silicon. Other carrier traps of yet unknown nature were detected as well. Variations of electrical activity of the traps were achieved applying variations in the process of the film formation. These changes were also detected during DLTS measurements, suggesting a possibility for applying of DLTS for the investigation and characterization of the thin-film Si material on glass.

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