High power handling capability of movable-waveguide direct contact MEMS switches

2005 ◽  
Author(s):  
S. Soda ◽  
Y. Yoshida ◽  
M. Hangai ◽  
T. Nishino ◽  
S. Izuo ◽  
...  
Keyword(s):  
High Power ◽  
Direct Contact ◽  
Mems Switches ◽  
Power Handling ◽  
Power Handling Capability

Gradient honeycomb absorber with high power handling capability

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
L. Liu ◽  
Y. Zhang ◽  
J. Q. Sheng ◽  
Y. M. Wei ◽  
R. M. Liu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

HTS narrowband stripline filter at 2.1 GHz with high power handling capability

2006 ◽  
Vol 49 (2) ◽  
pp. 254-257 ◽  
Author(s):  
Xubo Guo ◽  
Xiaoping Zhang ◽  
Bisong Cao ◽  
Bin Wei ◽  
Lijuan Mu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

COMPLEX IMPEDANCE-TRANSFORMATION OUT-OF-PHASE POWER DIVIDER WITH HIGH POWER-HANDLING CAPABILITY

2015 ◽  
Vol 53 ◽  
pp. 13-19 ◽  
Author(s):  
Lulu Bei ◽  
Shen Zhang ◽  
Kai Huang
Keyword(s):  
High Power ◽  
Complex Impedance ◽  
Power Divider ◽  
Power Handling ◽  
Power Handling Capability

Wideband planar microstrip crossover with high power handling capability and low distortion

2012 ◽  
Vol 55 (2) ◽  
pp. 439-443 ◽  
Author(s):  
Bassem Henin ◽  
Amin Abbosh
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability ◽  
Low Distortion

Wideband Gysel HMSIW power divider with high power-handling capability

2018 ◽  
Vol 10 (3) ◽  
pp. 308-312
Author(s):  
Kaijun Song ◽  
Te Kong ◽  
Yu Zhu ◽  
Hongxing Xu ◽  
Lifei Jiang ◽  
...  
Keyword(s):  
High Power ◽  
Reasonable Agreement ◽  
Impedance Matching ◽  
Power Divider ◽  
Mode Analysis ◽  
Analysis Method ◽  
Input Output ◽  
Output Impedance ◽  
Power Handling ◽  
Power Handling Capability

AbstractA novel Gysel power divider with high power-handling capability based on half-mode substrate integrated waveguide (HMSIW) has been presented in this paper. A HMSIW ring is used and good input/output impedance matching is achieved based on HMSIW-microstrip taper transition. Two microstrip stubs are introduced in HMSIW ring to assemble two isolation resistors to improve the isolation between the output ports. The even- and odd-mode analysis method is used for the presented circuit. A prototype of the presented power divider is designed, fabricated, and measured. The measured results show a reasonable agreement with the simulated ones.

Power Handling Capability Improvement of Metal-Contact RF MEMS Switches by Optimized Array Configuration Design of Contact Dimples

2014 ◽  
Vol 609-610 ◽  
pp. 1417-1421
Author(s):  
Chen Xu Zhao ◽  
Xin Guo ◽  
Tao Deng ◽  
Ling Li ◽  
Ze Wen Liu
Keyword(s):  
Rf Mems ◽  
Contact Point ◽  
Metal Contact ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Array Configuration ◽  
Power Handling ◽  
Novel Approach ◽  
Rf Mems Switches ◽  
Power Handling Capability

This paper presents a novel approach to enhancing power-handling capability of metal-contact radio-frequency micro-electro-mechanical systems (RF MEMS) switches based on an Optimized Array Configured (OAC) contact dimples design. The simulation results reveal that this strategy can distribute the RF current more uniformly through each contact of the switch than traditional multiple parallel-configured contacts design, thus leading to a more effective reduction of current through each contact. Therefore, probability of micromelding and adhesion at metal contact point owing to localized high current induced Joule heating, which limits the power handling capability of the metal-contact RF MEMS switch, can be effectively reduced by the proposed approach. Comparing with previously fabricated switch, power-handling capability of the switch with OAC contact dimples can be dramatically improved over 390%.

High-temperature superconducting microstrip filters with high power-handling capability

2002 ◽  
Author(s):  
G.-C. Liang ◽  
D. Zhang ◽  
C.-F. Shih ◽  
M.E. Johansson ◽  
R. Withers ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Temperature Superconducting ◽  
Power Handling ◽  
Microstrip Filters ◽  
Power Handling Capability
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