Compact Models for Radiation Hardening by Design of SiGe BiCMOS, GaAs and SOI CMOS Microwave Circuits

Author(s):  
Denis I. Sotskov ◽  
Nikolay A. Usachev ◽  
Vadim V. Elesin ◽  
Igor O. Metelkin ◽  
Nikita M. Zhidkov ◽  
...  
2009 ◽  
Vol 44 (5) ◽  
pp. 1617-1628 ◽  
Author(s):  
David J. Barnhart ◽  
Tanya Vladimirova ◽  
Martin N. Sweeting ◽  
Kenneth S. Stevens

2014 ◽  
Vol 61 (3) ◽  
pp. 1236-1242 ◽  
Author(s):  
Philippe C. Adell ◽  
Jeremy Yager ◽  
Zack Pannell ◽  
Jacob Shelton ◽  
Mohammad M. Mojarradi ◽  
...  

2014 ◽  
Vol 27 (2) ◽  
pp. 251-258 ◽  
Author(s):  
Alessandra Camplani ◽  
Seyedruhollah Shojaii ◽  
Hitesh Shrimali ◽  
Alberto Stabile ◽  
Valentino Liberali

Design techniques for radiation hardening of integrated circuits in commercial CMOS technologies are presented. Circuits designed with the proposed approaches are more tolerant to both total dose and to single event effects. The main drawback of the techniques for radiation hardening by design is the increase of silicon area, compared with a conventional design.


2019 ◽  
Vol 2 (1) ◽  
pp. 33-51
Author(s):  
Yu. M. Gerasimov ◽  
◽  
N. G. Grigoryev ◽  
A. V. Kobylyatskiy ◽  
Ya. Ya. Petrichkovich ◽  
...  

Author(s):  
Yuriy M. Gerasimov ◽  
Nikolay G. Grigoryev ◽  
Andrey V. Kobylyatskiy ◽  
Yaroslav Ya. Petrichkovich ◽  
Tatiana V. Solokhina

Author(s):  
P. Chevalier ◽  
F. Gianesello ◽  
A. Pallotta ◽  
J. Azevedo Goncalves ◽  
G. Bertrand ◽  
...  
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