mos circuits
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2021 ◽  
Vol 2032 (1) ◽  
pp. 012111
Author(s):  
G A Mustafaev ◽  
A I Khasanov ◽  
A G Mustafaev

Considering the roadmap of silicon, the high rate of shrinkage in dimensions of typical MOS circuits, genuine difficulties endanger this innovation. A quantum-dot cellular automaton (QCA) is an outstanding and conceivable answer for substitution of CMOS technology. Sequential circuits contain combinational circuits and memory elements which store binary information. Latches and Flip-flop circuits are the basic components of computerized circuits, along these lines. The area and energy of the sequential circuits has to be minimal for speed applications. Traditional implementation of JK flip-flop circuits requires more cells and consumes more energy. This paper proposes a compact and low energy JK Flip-flop, designed in CAD tool, QCADesigner. Analysis of energy was performed using the CAD tool, QCADesigner-E. The experimental results obtained in the proposed paper demonstrate the reduction in the cell count which in turn brings down the complexity of the circuit when compared to the reference QCA based JK Flip-flop circuits and it also shows a reduction in energy and area.


2016 ◽  
Vol 858 ◽  
pp. 631-634
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
H.K. Chan ◽  
A.E. Murphy ◽  
D.A. Smith ◽  
...  

We demonstrate the influence of enhancing the dielectric film used to form the gate in complimentary MOS circuits, designed for high temperature operation. The data show that the characteristics of both n-MOS and p-MOS capacitors and transistors have degraded capacitance characteristics in terms of the trapped charge in the dielectric, although the interface state density is dictated by the underlying stub oxide, at around 5×1012 cm-2eV-1. The use of a deposited oxide also reduces the variability in the critical electric field in the oxide, whilst maintaining a value of approximately 10MV cm-1. The channel mobility extracted from n-and pMOS transistors fabricated alongside the capacitors showed similar values, of approximately 3.8 cm2V-1s-1, which are limited by the high doping level in the epilayers used in this study.


2015 ◽  
Vol 104 ◽  
pp. 90-95 ◽  
Author(s):  
Amit Jain ◽  
Basanta Singh Nameriakpam ◽  
Subir Kumar Sarkar

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