A VLSI implementation of a frequency synthesizer based on a charge pump PLL

Author(s):  
Radu Gabriel Bozomitu ◽  
Vlad Cehan ◽  
Constantin Barabasa ◽  
Neculai Cojan
2019 ◽  
Vol 8 (2) ◽  
pp. 3984-3995

Frequency Synthesizer forms the heart of electronic communication system. Phase Locked Loop (PLL) based Frequency Synthesizers over the years has become the ubiquitous solution for generation of stable clock source. But it is a challenging task to design and develop PLL to be used in radiation environment such as in satellites, space systems and military electronics. Since impact of radiation strike on PLL is said to introduce transient faults resulting in increased timing jitter, distortion in phase, and bit flips. One or more of the above said effects can initiate false triggering which may result in incorrect data to be latched, loss of synchronization in data processing and networking. This may lead to catastrophic effect. Hence, as the stability of frequency synthesizer is of vital importance, there is a stressful need for design of radiation hard, fault tolerant frequency synthesizer. With this motivation, in this paper, a radiation hard CMOS Charge Pump PLL is designed to synthesize a 2.4GHz frequency source using 20MHz reference input frequency. The proposed radiation hard PLL design uses a hybrid Radiation Hardening By Design (RHBD) fault tolerant technique combined with redundancy, hence offering a twofold level of fortification from radiation spikes. Cadence tool was used for simulation. The PLL designed has exhibited satisfactory performance. The RHBD Charge Pump PLL in presence of radiation strike resulted in rms jitter of 128.9ps, phase noise of -94.03dbc/Hz and settling time of 159ns against the IEEE 802.11b/g standard requirement of 250ps jitter, -110dbc/Hz phase noise and 10us setting time.


1994 ◽  
Vol 42 (7) ◽  
pp. 2490-2498 ◽  
Author(s):  
M. Van Paemel

Author(s):  
Hui Pan ◽  
Thomas Gibson

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.


Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1212
Author(s):  
Kazuma Koketsu ◽  
Toru Tanzawa

This paper describes a charge pump system for a flexible thermoelectric generator (TEG). Even though the TEG has high-output impedance, the system controls the input voltage to keep it higher than the minimum operating voltage by modulating the input impedance of the charge pump using two-phase operation with low- and high-input impedance modes. The average input impedance can be matched with the output impedance of the TEG. How the system can be designed is also described in detail. A design demonstration was performed for the TEG with 400 Ω. The fabricated system was also measured with a flexible-type TEG based on carbon nanotubes. Even with an output impedance of 1.4 kΩ, the system converted thermal energy into electric power of 30 μW at 2.5 V to the following sensor ICs.


Sign in / Sign up

Export Citation Format

Share Document