Molecular beam epitaxial growth of GaN on 3C-SiC/Si(111) substrates using a thick AlN buffer layer
Keyword(s):
2020 ◽
Vol 38
(6)
◽
pp. 062804
2000 ◽
Vol 39
(Part 1, No. 3A)
◽
pp. 1039-1043
◽
2005 ◽
Vol 278
(1-4)
◽
pp. 293-298
◽
1997 ◽
Vol 175-176
◽
pp. 883-887
◽
2011 ◽
Vol 334
(1)
◽
pp. 113-117
◽
2000 ◽
Vol 208
(1-4)
◽
pp. 93-99
◽
1993 ◽
Vol 68
(2)
◽
pp. 203-207
◽