Molecular Beam Epitaxial Growth of GaN on (0001) Al2O3Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature
2000 ◽
Vol 39
(Part 1, No. 3A)
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pp. 1039-1043
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2020 ◽
Vol 38
(6)
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pp. 062804
1990 ◽
Vol 8
(2)
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pp. 297
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1995 ◽
Vol 34
(Part 2, No. 3B)
◽
pp. L339-L341
1995 ◽
Vol 150
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pp. 755-759
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