Molecular Beam Epitaxial Growth of GaN on (0001) Al2O3Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature

2000 ◽  
Vol 39 (Part 1, No. 3A) ◽  
pp. 1039-1043 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi
1988 ◽  
Vol 141 ◽  
Author(s):  
B. J. Garrison ◽  
M. T. Miller ◽  
D.W. Brenner

Summary:Molecular dynamics simulations have been performed that examine the microscopic mechanisms of rearrangements of atoms on the Si{ 1001 surface due to deposition of gas phase atoms. For thermal energy deposition we find that the gas atoms initially attach to dangling bonds of the surface dimer atoms. The dimer ’unreconstruction’ is due to a diffusion event on the surface, thus is temperature activated. We also find that dimers may open in regions of the surface where there are several atoms not at lattice sites, thus a low temperature amorphous structure. For 5-10 eV deposition there are direct mechanisms of dimer opening that occur on the 50-100 fs timescale. For energies greater than 15-20 eV there is implantation of the silicon atoms which leads to subsurface damage.


1992 ◽  
Vol 4 (2) ◽  
pp. 158-163,f2
Author(s):  
Maki KAWAI ◽  
Akihisa YANASE ◽  
Masami MORI ◽  
Nobuo ISHIZAWA ◽  
Masahiro KUDO

1994 ◽  
Vol 64 (15) ◽  
pp. 2031-2033 ◽  
Author(s):  
V. V. Mamutin ◽  
N. F. Kartenko ◽  
S. I. Goloschapov ◽  
V. V. Tretjakov ◽  
P. S. Kop’ev

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