Quantum ballistic simulation study of InGaAs/InAs/InGaAs quantum well MOSFET: Effects of doping and physical device parameters
2000 ◽
Vol 47
(7)
◽
pp. 1149-1154
◽
Keyword(s):
2016 ◽
Vol 32
(1)
◽
pp. 015006
◽
1994 ◽
Vol 30
(2)
◽
pp. 424-440
◽
Keyword(s):
Keyword(s):
2007 ◽