GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pal ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

AbstractThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

The growth of AlGaAs–InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects

1997 ◽  
Vol 70 (1) ◽  
pp. 52-54 ◽  
Author(s):  
Robert N. Bicknell-Tassius ◽  
Kyeong Lee ◽  
April S. Brown ◽  
Georgianna Dagnall ◽  
Gary May
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Ingaas Quantum Well

GaAs‐InGaAs double delta‐doped quantum‐well switching device prepared by molecular beam epitaxy

1993 ◽  
Vol 62 (13) ◽  
pp. 1504-1506 ◽  
Author(s):  
Wei‐Chou Hsu ◽  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Wen‐Shiung Lour
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Switching Device

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 707 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

ABSTRACTThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

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