Simulation Analysis on CIGS Solar Cell on Different Absorber Layer Thickness Subject to Temperature Change Using SCAPS 1-D Software

A new structure for CuIn1−xGaxSe2 (CIGS) solar cell is investigated. The structure consists of an absorber layer with constant bandgap placed next to the cadmium sulfide (CdS) buffer layer and a graded bandgap absorber layer positioned near the molybdenum (Mo) back contact. This leads to a reduced recombination rate at the back contact and enhances collection of generated carriers by additional induced drift field. The structure provides higher efficiency than previous structures. Optimum value of bandgap, thickness, and doping level of the layers are determined to reach maximum efficiency. Moreover, a trap density model is interpolated and applied in the simulations.

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Optimization of Mixed Sn and Pb Perovskite Solar Cell in Terms of Transport Layers and Absorber Layer Thickness Variation

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455886 ◽

2021 ◽

Author(s):

Sakshi Sharma ◽

Rahul Pandey ◽

Jaya Madan ◽

Rajnish Sharma

Keyword(s):

Solar Cell ◽

Layer Thickness ◽

Perovskite Solar Cell ◽

Absorber Layer ◽

Thickness Variation

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Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

Advances in Mechanical Engineering ◽

10.1155/2014/723136 ◽

2014 ◽

Vol 6 ◽

pp. 723136 ◽

Cited By ~ 1

Author(s):

Dyi-Cheng Chen ◽

Ming-Fei Chen ◽

Ming-Ren Chen

Keyword(s):

Stainless Steel ◽

Solar Cell ◽

Simulation Analysis ◽

Processing System ◽

Base Plate ◽

Simulation Software ◽

Experimental Results ◽

Uv Laser ◽

Cigs Solar Cell ◽

Laser Apparatus

This study used ANSYS simulation software for analyzing an ultraviolet (UV) (355 nm) laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to S iO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 μs, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.

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Optimization of the CIGS solar cell by adding a heavily doped layer and an intrinsic layer at absorber layer

Optical and Quantum Electronics ◽

10.1007/s11082-016-0380-x ◽

2016 ◽

Vol 48 (2) ◽

Cited By ~ 3

Author(s):

Fatemeh Tahvilzadeh ◽

Neda Rezaie

Keyword(s):

Solar Cell ◽

Absorber Layer ◽

Cigs Solar Cell ◽

Heavily Doped

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A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

Coatings ◽

10.3390/coatings11080930 ◽

2021 ◽

Vol 11 (8) ◽

pp. 930

Author(s):

Fazliyana Za’abar ◽

Yulisa Yusoff ◽

Hassan Mohamed ◽

Siti Abdullah ◽

Ahmad Mahmood Zuhdi ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Cell Structure ◽

Absorber Layer ◽

Back Contact ◽

Cigs Solar Cell ◽

Cigs Thin Film ◽

Solar Cell Structure ◽

Mose2 Layer ◽

Graded Bandgap

The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated.

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PERFORMANCE ANALYSIS OF COPPER TIN SULFIDE, Cu2SnS3 (CTS) WITH VARIOUS BUFFER LAYERS BY USING SCAPS IN SOLAR CELLS

Surface Review and Letters ◽

10.1142/s0218625x17500731 ◽

2016 ◽

Vol 24 (06) ◽

pp. 1750073 ◽

Cited By ~ 1

Author(s):

I. S. AMIRI ◽

H. AHMAD ◽

M. M. ARIANNEJAD ◽

M. F. ISMAIL ◽

K. THAMBIRATNAM ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Buffer Layer ◽

Layer Thickness ◽

Absorber Layer ◽

Effect Of Temperature ◽

Structural Parameter ◽

Total Efficiency ◽

Tin Sulfide ◽

Cell Efficiency

This work examines the performance of the Cu2SnS3 (CTS) solar cells using the solar cell capacitance simulator (SCAPS) approach. The performance of the CTS solar cell was evaluated in terms of [Formula: see text], [Formula: see text], fill factor and efficiency. The structural parameter variation of CTS solar cell has been studied in terms of buffer and absorber layer thickness, bandgap, effect of temperature on total efficiency of the solar cell. Increasing the thickness of the CdS buffer layer decreases the efficiency of the simulated solar cell. A significant increase in the efficiency of the solar cell to 20.36% was obtained with a simulated buffer layer thickness to 10[Formula: see text]nm. In terms of the CTS absorber layer thickness, the efficiency of the solar cell increases by increasing the thickness of absorber layer. By setting the thickness of CTS to 4.0[Formula: see text][Formula: see text]m, the efficiency obtained is 20.36%. It is observed that an increase in the bandgap can enhance the efficiency of the solar cell. In the performed simulation, an 0.9[Formula: see text]eV bandgap resulted in a 11.58% cell efficiency and a 1.25[Formula: see text]eV bandgap resulted in 21.96% cell efficiency. In terms of temperature, the efficiency of 20.36% was obtained at 300[Formula: see text]K, and as the temperature increases, cell efficiency will decrease.

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Impact of doping concentration, thickness, and band-gap on individual layer efficiency of CIGS solar cell

Functional Materials Letters ◽

10.1142/s179360472151022x ◽

2021 ◽

pp. 2151022

Author(s):

Kitalu Ricin Ngoy ◽

Abhay Kumar Singh ◽

Tien-Chien Jen

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Layer Thickness ◽

Current Density ◽

Open Circuit Voltage ◽

Open Circuit ◽

Individual Layer ◽

Cigs Solar Cell ◽

Highly Efficient ◽

Cigs Solar Cells

An investigation with the individual layer physical property of the CIGS solar cells is a significant parameter to design and fabricate highly efficient devices. Therefore, this work demonstrates the thickness and carrier concentrations doping dependence simulations using SCAPS 1D software. The optimized CIGS solar cells different layer properties such as short-circuit current density ([Formula: see text], open-circuit voltage ([Formula: see text], Fill Factor (FF) and conversion efficiency ([Formula: see text] with varying thickness and doped concentration are presented. This optimized layer by layer simulation work would be useful to build a suitable CIGS solar cell structure. This simulation investigation showed that an optimal CIGS device structure can be fabricated possessing the configuration of a window layer ZnO : Al thickness 0.02 [Formula: see text]m, ZnO layer thickness 0.01 [Formula: see text] m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and [Formula: see text] = 10[Formula: see text] cm[Formula: see text], a CdS buffer layer thickness 0.01 [Formula: see text]m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and absorber layer CIGS in the thickness range of 1–4 [Formula: see text]m with the doping level range [Formula: see text] = 10[Formula: see text]–10[Formula: see text] cm[Formula: see text], along with the optimal CIGS energy bandgap range of 1.3–1.45 eV. According to optimized simulation results, a CIGS solar cell device can possess electric efficiency 26.61%, FF 82.96%, current density of 38.21 mA/cm2 with the open circuit voltage 0.7977 eV. Hence, these optimized simulation findings could be helpful to provide a path to design and fabricate highly efficient CIGS solar cells devices.

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