Spread of critical currents in thin-film YBa/sub 2/Cu/sub 3/O/sub 7-x/ bicrystal junctions and faceting of grain boundary

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Download Full-text

Critical currents and Josephson penetration depth in planar thin‐film high‐Tc Josephson junctions

Applied Physics Letters ◽

10.1063/1.117568 ◽

1996 ◽

Vol 69 (25) ◽

pp. 3914-3916 ◽

Cited By ~ 15

Author(s):

Sergey K. Tolpygo ◽

Michael Gurvitch

Keyword(s):

Thin Film ◽

Penetration Depth ◽

Josephson Junctions ◽

Critical Currents ◽

High Tc

Download Full-text

Electrical conduction of intrinsic grain and grain boundary in Mn-Co-Ni-O thin film thermistors: Grain size influence

Journal of Applied Physics ◽

10.1063/1.3657772 ◽

2011 ◽

Vol 110 (9) ◽

pp. 093708 ◽

Cited By ~ 16

Author(s):

L. He ◽

Z. Y. Ling

Keyword(s):

Thin Film ◽

Grain Size ◽

Grain Boundary ◽

Electrical Conduction

Download Full-text

Evaluation of grain boundary trap states in polycrystalline–silicon thin-film transistors by mobility and capacitance measurements

Journal of Applied Physics ◽

10.1063/1.1454202 ◽

2002 ◽

Vol 91 (7) ◽

pp. 4637-4645 ◽

Cited By ~ 46

Author(s):

H. Ikeda

Keyword(s):

Thin Film ◽

Grain Boundary ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Trap States ◽

Silicon Thin Film ◽

Capacitance Measurements

Download Full-text

Spatially resolved investigation of the defect states in methylammonium lead iodide perovskite bicrystals

Journal of Materials Chemistry C ◽

10.1039/c8tc06622a ◽

2019 ◽

Vol 7 (42) ◽

pp. 13156-13160 ◽

Cited By ~ 1

Author(s):

Svetlana Sirotinskaya ◽

Christian Fettkenhauer ◽

Daichi Okada ◽

Yohei Yamamoto ◽

Doru C. Lupascu ◽

...

Keyword(s):

Thin Film ◽

Grain Boundary ◽

System Approach ◽

Defect States ◽

Lead Iodide ◽

Modal System ◽

Trap Formation ◽

Spatially Resolved ◽

Methylammonium Lead Iodide

Introducing a modal system approach for the analytical perovskite thin-film trap physics evaluation. Our study confirms existing models for trap formation in MAPI, substantiating different defect states in the grain boundary and bulk regions.

Download Full-text