Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Direct observation of grain boundary effects in polycrystalline silicon thin‐film transistors

1982 ◽  
Vol 40 (7) ◽  
pp. 598-600 ◽  
Author(s):  
H. J. Leamy ◽  
R. C. Frye ◽  
K. K. Ng ◽  
G. K. Celler ◽  
E. I. Povilonis ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Direct Observation ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Boundary Effects ◽  
Silicon Thin Film ◽  
Grain Boundary Effects

Noise Sources in Polycrystalline Silicon Thin-Film Transistors

2002 ◽  
Vol 744 ◽  
Author(s):  
Il Ki Han ◽  
Young Ju Park ◽  
Woon Jo Cho ◽  
Won Jun Choi ◽  
Jungil Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Barrier Height ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Sources ◽  
New Device

ABSTRACTSources for low frequency noise in polycrystalline silicon thin-film transistors are analytically investigated. The grain boundary is modeled as symmetric Schottky barrier and a new device equation for current conduction in thin-film transistors is presented. At lower currents where barrier height is large enough to provide necessary distribution of time constants for 1/f noise, the number fluctuation via barrier height modulation at the grain boundary is found to be the main noise generation mechanism. At higher currents, mobility and diffusivity fluctuation are found to be dominant

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