Large 256-Pixel X-ray Transition-Edge Sensor Arrays With Mo/TiW/Cu Trilayers

2015 ◽  
Vol 25 (3) ◽  
pp. 1-4 ◽  
Author(s):  
Mikko R. J. Palosaari ◽  
Leif Gronberg ◽  
Kimmo M. Kinnunen ◽  
David Gunnarsson ◽  
Mika Prunnila ◽  
...  
2020 ◽  
Vol 200 (5-6) ◽  
pp. 277-285 ◽  
Author(s):  
M. Lorenz ◽  
C. Kirsch ◽  
P. E. Merino-Alonso ◽  
P. Peille ◽  
T. Dauser ◽  
...  

Abstract We present numerical simulations of full transition-edge sensor (TES) arrays utilizing graphical processing units (GPUs). With the support of GPUs, it is possible to perform simulations of large pixel arrays to assist detector development. Comparisons with TES small-signal and noise theory confirm the representativity of the simulated data. In order to demonstrate the capabilities of this approach, we present its implementation in , a simulator for the X-ray Integral Field Unit, a cryogenic X-ray spectrometer on board the future Athena X-ray observatory.


2014 ◽  
Vol 176 (3-4) ◽  
pp. 597-603 ◽  
Author(s):  
S. J. Lee ◽  
S. R. Bandler ◽  
S. E. Busch ◽  
J. S. Adams ◽  
J. A. Chervenak ◽  
...  

2015 ◽  
Vol 107 (22) ◽  
pp. 223503 ◽  
Author(s):  
S. J. Lee ◽  
J. S. Adams ◽  
S. R. Bandler ◽  
J. A. Chervenak ◽  
M. E. Eckart ◽  
...  

2006 ◽  
Vol 12 (S02) ◽  
pp. 832-833
Author(s):  
T Jach ◽  
J Ullom ◽  
N Ritchie ◽  
J Beall

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006


Author(s):  
Stephen J. Smith ◽  
Joseph S. Adams ◽  
Simon R. Bandler ◽  
James A. Chervenak ◽  
Megan E. Eckart ◽  
...  

Microscopy ◽  
2020 ◽  
Vol 69 (5) ◽  
pp. 298-303
Author(s):  
Keiichi Tanaka ◽  
Akira Takano ◽  
Atsushi Nagata ◽  
Satoshi Nakayama ◽  
Kaname Takahashi ◽  
...  

Abstract A scanning electron microscope transition edge sensor has been developed to analyze the minor or trace constituents contained in a bulk sample and small particles on the sample under a low accelerating voltage (typically <3 keV). The low accelerating voltage enables to improve the spatial analysis resolution because the primary electron diffusion length is limited around the sample surface. The characteristic points of our transition edge sensor are 1) high-energy resolution at 7.2 eV@Al-Kα, 2) continuous operation by using a cryogen-free dilution refrigerator and 3) improvement of transmission efficiency at B-Kα by using thin X-ray film windows between the sample and detector (about 30 times better than our previous system). Our system could achieve a stabilization of the peak shift at Nd-Mα (978 eV) within 1 eV during an operation time of 27 000 s. The detection limits with B-Kα for detection times 600 and 27 000 s were 0.27 and 0.038 wt%, respectively. We investigated the peak separation ability by measuring the peak intensity ratio between the major constitute (silicon) and the minor constitute (tungsten) because the Si-Kα line differs from the W-Mα line by only 35 eV and a small W-Mα peak superimposed on the tail of the large Si-Kα peak. The peak intensity ratio (I(W-Mα)/I(Si-Kα)) was adjusted by the W particle area ratio compared with the Si substrate area. The transition edge sensor could clearly separate the Si-Kα and W-Mα lines even under a peak intensity ratio of 0.01.


2008 ◽  
Vol 52 (10) ◽  
pp. 1619-1624 ◽  
Author(s):  
Ari-David Brown ◽  
David Chuss ◽  
Vilem Mikula ◽  
Ross Henry ◽  
Edward Wollack ◽  
...  

2012 ◽  
Vol 167 (3-4) ◽  
pp. 129-134 ◽  
Author(s):  
M. R. J. Palosaari ◽  
K. M. Kinnunen ◽  
M. L. Ridder ◽  
J. van der Kuur ◽  
H. F. C. Hoevers ◽  
...  

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