Influence of RE-Based Liquid Source (RE = Sm, Gd, Dy, Y, Yb) on EuBCO/Ag Superconducting Bulks

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Filip Antoncik ◽  
Michal Lojka ◽  
Tomas Hlasek ◽  
Jakub Skocdopole ◽  
David Sedmidubsky ◽  
...  
Keyword(s):  
Liquid Source

Characterization of Al-doped spinel LiMn2O4 thin film cathode electrodes prepared by Liquid Source Misted Chemical Deposition (LSMCD) technique

2003 ◽  
Vol 48 (28) ◽  
pp. 4223-4231 ◽  
Author(s):  
Ki Woong Kim ◽  
Sun-Woo Lee ◽  
Kyoo-Seung Han ◽  
Hyun Jin Chung ◽  
Seong Ihl Woo
Keyword(s):  
Thin Film ◽  
Chemical Deposition ◽  
Spinel Limn2o4 ◽  
Liquid Source

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

2003 ◽  
Vol 50 (10) ◽  
pp. 2088-2094 ◽  
Author(s):  
Moon Sig Joo ◽  
Byung Jin Cho ◽  
Chia Ching Yeo ◽  
Daniel Siu Hung Chan ◽  
Sung Jin Whoang ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Gate Dielectric ◽  
Liquid Source

High-JcYBa2Cu3O7−δsuperconducting film grown by laser-assisted chemical vapor deposition using a single liquid source and its microstructure

2013 ◽  
Vol 26 (9) ◽  
pp. 095016 ◽  
Author(s):  
Pei Zhao ◽  
Akihiko Ito ◽  
Takeharu Kato ◽  
Daisaku Yokoe ◽  
Tsukasa Hirayama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Source

Fabrication of large single-domain Gd–Ba–Cu–O bulks using Y-based liquid source

2011 ◽  
Vol 65 (2) ◽  
pp. 304-306 ◽  
Author(s):  
Guo-Zheng Li ◽  
Wan-Min Yang ◽  
Wei Liang ◽  
Jia-Wei Li
Keyword(s):  
Single Domain ◽  
Liquid Source

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

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