Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

2003 ◽  
Vol 50 (10) ◽  
pp. 2088-2094 ◽  
Author(s):  
Moon Sig Joo ◽  
Byung Jin Cho ◽  
Chia Ching Yeo ◽  
Daniel Siu Hung Chan ◽  
Sung Jin Whoang ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Gate Dielectric ◽  
Liquid Source

Aluminum oxide film as gate dielectric for organic FETs: Anodization and characterization

2008 ◽  
Vol 205 (3) ◽  
pp. 626-632 ◽  
Author(s):  
X.-D. Dang ◽  
W. Plieth ◽  
S. Richter ◽  
M. Plötner ◽  
W.-J. Fischer
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Gate Dielectric ◽  
Aluminum Oxide Film ◽  
Organic Fets

Low-Voltage Poly-Si TFTs with Solution-Processed Aluminum Oxide Gate Dielectric

2011 ◽  
Vol 14 (8) ◽  
pp. J51
Author(s):  
In Kang ◽  
Christophe Avis ◽  
Dong Han Kang ◽  
Jin Jang
Keyword(s):  
Aluminum Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Solution Processed

GaAs structures with a gate dielectric based on aluminum-oxide layers

2016 ◽  
Vol 50 (2) ◽  
pp. 204-207 ◽  
Author(s):  
I. L. Kalentyeva ◽  
O. V. Vikhrova ◽  
A. V. Zdoroveyshchev ◽  
Yu. A. Danilov ◽  
A. V. Kudrin
Keyword(s):  
Aluminum Oxide ◽  
Gate Dielectric ◽  
Oxide Layers

Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

2014 ◽  
Vol 6 (22) ◽  
pp. 19592-19599 ◽  
Author(s):  
Rita Branquinho ◽  
Daniela Salgueiro ◽  
Lídia Santos ◽  
Pedro Barquinha ◽  
Luís Pereira ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Oxide ◽  
Combustion Synthesis ◽  
Gate Dielectric ◽  
Oxide Thin Films

Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102362-102366 ◽  
Author(s):  
Hyungjin Park ◽  
Yunyong Nam ◽  
Jungho Jin ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Ethylene Glycol ◽  
Aluminum Oxide ◽  
Space Charge ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

Undecomposed ethylene glycol residuals in solution processed aluminum oxide gate dielectric result in the frequency-dependent capacitance.

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