Electrical Manipulation of Spin Precession in an InGaAs-Based 2DEG Due to the Rashba Spin-Orbit Interaction

2007 ◽  
Vol 54 (5) ◽  
pp. 955-960 ◽  
Author(s):  
Junsaku Nitta ◽  
Tobias Bergsten
2006 ◽  
Vol 20 (06) ◽  
pp. 715-724
Author(s):  
HUI SU ◽  
BEN-YUAN GU

The combined effects of Rashba spin-orbit interaction (SOI) strength and the length of SOI excited region, which can be controlled by the external gate voltage deposited on the heterostructure, and on the electron spin precession in quasi-one-dimensional quantum wires are investigated by evaluating the relative conductance change, i.e. the ratio of difference of the conductances of the spin-up and spin-down polarized electrons to the total conductance. It is found that for proper wire width, electron spin precession can be smoothly achieved by co-adjusting the SOI strength and the length of SOI excited region. However, for wide quantum wire and strong SOI, the electron spin precession is significantly reduced due to the appearance of inter-subband mixing.


2009 ◽  
Vol 373 (48) ◽  
pp. 4489-4492 ◽  
Author(s):  
Xianbo Xiao ◽  
Xiaomao Li ◽  
Yuguang Chen

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