The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

Rinus Tek Po Lee; Alvin Tian-Yi Koh; Kian-Ming Tan; Tsung-Yang Liow; Dong Zhi Chi; Yee-Chia Yeo

doi:10.1109/ted.2009.2030873

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2030873 ◽

2009 ◽

Vol 56 (11) ◽

pp. 2770-2777 ◽

Cited By ~ 9

Author(s):

Rinus Tek Po Lee ◽

Alvin Tian-Yi Koh ◽

Kian-Ming Tan ◽

Tsung-Yang Liow ◽

Dong Zhi Chi ◽

...

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Reduction

Re-examination the effects of selenium segregation on the Schottky barrier height reduction of the NiGe/Ge contact

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578006 ◽

2016 ◽

Author(s):

Yi-Ju Chen ◽

Hung-Ju Chou ◽

Ching-I Li ◽

Bing-Yue Tsui

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Reduction

Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1428 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 1428-1430 ◽

Cited By ~ 1

Author(s):

Masaaki Onomura ◽

Shinji Saito ◽

John Rennie ◽

Yukie Nishikawa ◽

Peter J. Parbrook ◽

...

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Reduction

Impact of thermal treatments on the schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction

2014 Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2014.7348552 ◽

2014 ◽

Author(s):

Albert Lee ◽

Abhijit Pethe ◽

Amol Joshi ◽

Guillaume Bouche ◽

Shaoming Koh ◽

...

Keyword(s):

Contact Resistance ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Thermal Treatments ◽

Height Reduction ◽

Resistance Reduction

Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

10.7567/ssdm.1995.pc-9-6 ◽

1995 ◽

Author(s):

M. Onomura ◽

S. Saito ◽

J. Rennie ◽

Y. Nishikawa ◽

P. J. Parbrook ◽

...

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Reduction

Schottky-barrier-height Reduction for n-Si and n-Ge by Insertion of Tungsten Silicide and Germanide Films Chemically Synthesized using Gas-phase Reactions

10.7567/ssdm.2016.ps-1-14l ◽

2016 ◽

Author(s):

N. Okada ◽

N. Uchida ◽

T. Kanayama

Keyword(s):

Schottky Barrier ◽

Gas Phase ◽

Barrier Height ◽

Schottky Barrier Height ◽

Gas Phase Reactions ◽

Tungsten Silicide ◽

Height Reduction

Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts

IEEE Electron Device Letters ◽

10.1109/led.2007.910003 ◽

2007 ◽

Vol 28 (12) ◽

pp. 1102-1104 ◽

Cited By ~ 42

Author(s):

Hoong-Shing Wong ◽

Lap Chan ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Low Resistance ◽

Height Reduction

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

Applied Physics Letters ◽

10.1063/1.4901193 ◽

2014 ◽

Vol 105 (18) ◽

pp. 182103 ◽

Cited By ~ 47

Author(s):

Raisul Islam ◽

Gautam Shine ◽

Krishna C. Saraswat

Keyword(s):

Fermi Level ◽

Nickel Oxide ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Reduction

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

Solid-State Electronics ◽

10.1016/j.sse.2006.05.023 ◽

2006 ◽

Vol 50 (7-8) ◽

pp. 1337-1340 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

M.F. Li

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Strained Si ◽

Height Reduction

Role of hybridization on the Schottky barrier height of carbon nanotube field effect transistors

Physical Review B ◽

10.1103/physrevb.79.125407 ◽

2009 ◽

Vol 79 (12) ◽

Cited By ~ 6

Author(s):

D. Casterman ◽

M. M. De Souza ◽

A. Tahraoui ◽

C. Durkan ◽

W. I. Milne

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Barrier Height ◽

Field Effect ◽

Schottky Barrier Height ◽

Field Effect Transistors

Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.03.051 ◽

2015 ◽

Vol 38 ◽

pp. 50-56 ◽

Cited By ~ 9

Author(s):

Thanh Thuy Trinh ◽

Kyungsoo Jang ◽

S. Velumani ◽

Vinh Ai Dao ◽

Junsin Yi

Keyword(s):

Thin Film ◽

Schottky Barrier ◽

Carrier Concentration ◽

Barrier Height ◽

Thin Film Transistors ◽

Schottky Barrier Height ◽

High Carrier Concentration ◽

High Carrier ◽

Amorphous Ingazno