High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain

2011 ◽  
Vol 58 (8) ◽  
pp. 2665-2669 ◽  
Author(s):  
Reza Ghandi ◽  
Benedetto Buono ◽  
Martin Domeij ◽  
Carl-Mikael Zetterling ◽  
Mikael Ostling
Keyword(s):  
High Voltage ◽  
Current Gain ◽  
Term Stability ◽  
Long Term Stability

High-voltage capabilities of ultra-thin Nb2O5 nanosheet coated LiNi1/3Co1/3Mn1/3O2 cathodes

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 67514-67519 ◽  
Author(s):  
S. Uchida ◽  
N. Zettsu ◽  
K. Hirata ◽  
K. Kami ◽  
K. Teshima
Keyword(s):  
High Voltage ◽  
Contact Area ◽  
Surface Coating ◽  
Charged State ◽  
Term Stability ◽  
Long Term Stability

The surface coating of LiNi1/3Co1/3Mn1/3 electrode with 1.1 nm Nb2O5 nanosheet enhanced the high voltage capability and long term stability of the charged state at 60 °C by reducing the contact area between electrode and electrolyte.

Stability of Current Gain in SiC BJTs

2014 ◽  
Vol 778-780 ◽  
pp. 1017-1020 ◽  
Author(s):  
Benedetto Buono ◽  
Fredrik Allerstam ◽  
Martin Domeij ◽  
Andrei Konstantinov ◽  
Krister Gumaelius ◽  
...  
Keyword(s):  
Basal Plane ◽  
Current Gain ◽  
Stress Tests ◽  
Large Area ◽  
Term Stability ◽  
Long Term Stability ◽  
Dc Stress

In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how wafer scanning techniques can be used to reject BJT dies with basal plane dislocations, thereby eliminating the risk for bipolar degradation.

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