Stability of Current Gain in SiC BJTs
2014 ◽
Vol 778-780
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pp. 1017-1020
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Keyword(s):
In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how wafer scanning techniques can be used to reject BJT dies with basal plane dislocations, thereby eliminating the risk for bipolar degradation.
Keyword(s):
2011 ◽
Vol 58
(8)
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pp. 2665-2669
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2018 ◽
Vol 122
(12)
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pp. 7005-7012
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Keyword(s):
2007 ◽
Vol 339
(1-2)
◽
pp. 189-196
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Keyword(s):
Keyword(s):