Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

2011 ◽  
Vol 58 (12) ◽  
pp. 4423-4426 ◽  
Author(s):  
Liangcai Wu ◽  
Xilin Zhou ◽  
Zhitang Song ◽  
Min Zhu ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Material

Si 1 Sb 2 Te 3 phase change material for chalcogenide random access memory

2007 ◽  
Vol 16 (8) ◽  
pp. 2475-2478 ◽  
Author(s):  
Zhang Ting ◽  
Song Zhi-Tang ◽  
Liu Bo ◽  
Liu Wei-Li ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Novel phase-change material GeSbSe for application of three-level phase-change random access memory

2010 ◽  
Vol 54 (4) ◽  
pp. 443-446 ◽  
Author(s):  
Yifeng Gu ◽  
Zhitang Song ◽  
Ting Zhang ◽  
Bo Liu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory

2011 ◽  
Vol 65 (7) ◽  
pp. 622-625 ◽  
Author(s):  
Yifeng Gu ◽  
Yan Cheng ◽  
Sannian Song ◽  
Ting Zhang ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

scholarly journals The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

2012 ◽  
Vol 112 (8) ◽  
pp. 084506 ◽  
Author(s):  
J. L. M. Oosthoek ◽  
D. Krebs ◽  
M. Salinga ◽  
D. J. Gravesteijn ◽  
G. A. M. Hurkx ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

2013 ◽  
Vol 102 (10) ◽  
pp. 103110 ◽  
Author(s):  
Yifeng Gu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Suyuan Bai ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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