Novel phase-change material GeSbSe for application of three-level phase-change random access memory

2010 ◽  
Vol 54 (4) ◽  
pp. 443-446 ◽  
Author(s):  
Yifeng Gu ◽  
Zhitang Song ◽  
Ting Zhang ◽  
Bo Liu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Si 1 Sb 2 Te 3 phase change material for chalcogenide random access memory

2007 ◽  
Vol 16 (8) ◽  
pp. 2475-2478 ◽  
Author(s):  
Zhang Ting ◽  
Song Zhi-Tang ◽  
Liu Bo ◽  
Liu Wei-Li ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

2011 ◽  
Vol 58 (12) ◽  
pp. 4423-4426 ◽  
Author(s):  
Liangcai Wu ◽  
Xilin Zhou ◽  
Zhitang Song ◽  
Min Zhu ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Material

Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory

2011 ◽  
Vol 65 (7) ◽  
pp. 622-625 ◽  
Author(s):  
Yifeng Gu ◽  
Yan Cheng ◽  
Sannian Song ◽  
Ting Zhang ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

scholarly journals The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

2012 ◽  
Vol 112 (8) ◽  
pp. 084506 ◽  
Author(s):  
J. L. M. Oosthoek ◽  
D. Krebs ◽  
M. Salinga ◽  
D. J. Gravesteijn ◽  
G. A. M. Hurkx ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

2013 ◽  
Vol 102 (10) ◽  
pp. 103110 ◽  
Author(s):  
Yifeng Gu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Suyuan Bai ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2731-2736 ◽  
Author(s):  
S. Shindo ◽  
Y. Sutou ◽  
J. Koike ◽  
Y. Saito ◽  
Y.-H. Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Surface Oxidation ◽  
Random Access Memory ◽  
Surface Cleaning ◽  
High Thermal Stability ◽  
Contact Resistivity ◽  
Access Memory ◽  
Change Material ◽  
Effect Of Surface

ABSTRACTThe contact resistivity, ρc, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρc between a W electrode and amorphous GeCu2Te3 (GCT) which shows high thermal stability. The surface cleaning of the amorphous GCT was conducted by Ar reverse sputtering. The ρc of the amorphous GCT whose surface was cleaned with Ar reverse sputtering was 6.7×10-3Ω cm2. Meanwhile, the ρc of the amorphous GCT with no surface cleaning was 8.0×10-5Ω cm2. The low ρc in the amorphous GCT with no surface cleaning was apparently due to the existence of a low resistance Cu-rich underlayer which was formed as a consequence of surface oxidation of the amorphous GCT. These results indicate that the surface of a PCM must be treated carefully to accurately measure the contact resistivity between the PCM and electrodes.

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